應用於K頻段之單向化全積體整合功率放大器與應用於V頻段之寬頻功率放大器研製

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姓名

陳柏勳(Po-Hsun Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

應用於K頻段之單向化全積體整合功率放大器與應用於V頻段之寬頻功率放大器研製
(Implementation on Fully Integrated Unilateralized CMOS Power Amplifiers for K-band Applications and Wideband Power Amplifier for V-band Applications)

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摘要(中)

本論文利用tsmc提供的0.18-μm CMOS 與90-nm CMOS製程設計功率放大器，在設計上分成兩部份，第一部份為tsmc 0.18-μm CMOS製程設計功率放大器以操作於K頻段功率放大器為主要目標。運用傳輸線型變壓器和磁耦合變壓器達到寬頻與低損耗的阻抗匹配，以及使用交錯耦合單向化電容抑制共源結構中由於閘-汲寄生電容（Cgd）所產生的密勒效應（Miller Effects），提高放大器電路的隔離度、穩定性和提升傳輸增益（S21），達成高隔離度和高增益之功率放大器；第二部份為全積體整合矽製程tsmc 90-nm CMOS設計於V頻段之寬頻功率放大器，使用T型傳輸線寬頻匹配技術，以及串接三級電晶體串疊架構達到寬頻功率放大器。
各電路特性量測如下：應用於K頻段之單向化差動功率放大器，傳輸增益（S21）為26.2 dB，反向傳輸增益（S12）低於-60 dB，飽和輸出功率為20.6 dBm，1-dB增益壓縮點輸出功率為17 .2 dBm，功率增進效率為16%， 3-dB頻寬為4 GHz（19.2 GHz至23.2 GHz）；應用傳輸線型變壓器於K頻段高增益單向化功率放大器，傳輸增益（S21）為26.2 dB，反向傳輸增益（S12）低於-58 dB，飽和輸出功率為20.3 dBm，1-dB增益壓縮點輸出功率為17 .2 dBm，功率增進效率為24.1%， 3-dB頻寬為4.5 GHz（18.8 GHz至23.3 GHz）；V頻段寬頻功率放大器，傳輸增益（S21）為17.8 dB，飽和輸出功率為11.4 dBm，1-dB增益壓縮點輸出功率為7.2 dBm，功率增進效率為4.4%， 3-dB頻寬（受限於量測儀器只能量測到67 GHz）為19.8 GHz（47.2 GHz至67 GHz）。

摘要(英)

Both K-band and V-band fully integrated silicon-based power amplifiers are designed in this thesis, which are fabricated in tsmc 0.18-μm and 90-nm CMOS processes, respectively.
In the first part, the power amplifier adopted a neutralization topology to mitigate the intrinsic gate-drain feedback of each transistor to increase power gain and reverse isolation. The amplifier consists of three differential stages that are used transformers for impedance matching and inter-stage coupling. The 3-dB bandwidths are from 19.3 to 23.3 GHz with reverse isolation better than 60 dB. The amplifier achieves a power gain of 26.2 dB, a saturated output power of 20.6 dBm, an output 1-dB gain compression point of 17.2 dBm and a power added efficiency of 16.2%. The chip size is 1.11 mm2 with pad.
In the second part, we use transmission-line transformers for the input and output matching networks. The 3-dB bandwidths are from 18.8 to 23.5 GHz with reverse isolation better than 58 dB. The amplifier achieves a power gain of 26.2 dB, a saturated output power of 20.3 dBm, an output 1-dB gain compression point of 17.4 dBm and a power added efficiency of 24.1%. The chip size is 1.11 mm2 with pad.
In the third part, a wideband V-band power amplifier is implemented by adopting wideband matching network technique. The V-band power amplifier with wideband in tsmcTM 90-nm CMOS Technology achieves a power gain of 17.8 dB, a saturation output power of 11.4 dBm, an output power at 1-dB gain compression point of 7.2 dBm, and a power added efficiency of 4.4%. The 3-dB bandwidths are from 47.2 to 67 GHz. The chip size is 0.57 mm2 with pad.

關鍵字(中)

★ 功率放大器
★ 傳輸線型變壓器
★ 單向化電路

關鍵字(英)

★ Power Amplifier
★ TLT
★ Unilateralization

論文目次

摘要 ............................................................................................................................................ I
ABSTRACT ............................................................................................................................. II
誌謝 ....................................................................................................................................... III
目錄 ......................................................................................................................................... IV
圖目錄 ..................................................................................................................................... VI
表目錄 ..................................................................................................................................... IX
第一章緒論 ........................................................................................................................ 1
1-1 研究動機 .................................................................................................................... 1
1-2 研究成果 .................................................................................................................... 2
1-3 章節簡介 .................................................................................................................... 3
第二章功率放大器 ............................................................................................................ 4
2-1 功率放大器簡介 ........................................................................................................ 4
2-2 功率放大器分類 ........................................................................................................ 8
第三章應用單向化電路與變壓器之高隔離度功率放大器 .......................................... 10
3-1 磁耦合變壓器與傳輸線型變壓器 .......................................................................... 10
3-1-1 磁耦合變壓器簡介 .......................................................................................... 10
3-1-2 傳輸線型變壓器簡介 ...................................................................................... 15
3-2 單向化電路與中和化電路 ...................................................................................... 17
3-2-1 電路簡介 .......................................................................................................... 17
3-2-2 增益、隔離度與穩定度之改善 ...................................................................... 20
3-3 研究現況 .................................................................................................................. 22
3-4 應用於 K 頻段之單向化差動功率放大器 ............................................................. 25
3-4-1 應用於 K 頻段之單向化差動功率放大器設計 ............................................. 25
3-4-2 電路模擬與量測結果 ...................................................................................... 41
3-4-3 結果比較與討論 .............................................................................................. 48
3-5 應用傳輸線型變壓器於 K 頻段之單向化差動功率放大器 ................................. 50
3-5-1 應用傳輸線型變壓器於 K 頻段之單向化差動功率放大器設計 ................. 50
3-5-2 電路模擬與量測結果 ...................................................................................... 54
3-5-3 結果比較與討論 .............................................................................................. 61
第四章應用 T 型傳輸線匹配之寬頻功率放大器 ......................................................... 66
4-1 研究現況 .................................................................................................................. 66
V

4-2 應用於 V 頻段之寬頻功率放大器 ......................................................................... 69
4-2-1 應用於 V 頻段之寬頻功率放大器設計 ......................................................... 69
4-2-2 電路模擬與量測結果 ...................................................................................... 75
4-2-3 結果比較與討論 .............................................................................................. 82
第五章結論 ...................................................................................................................... 84
5-1 結論 .......................................................................................................................... 84
5-2 未來方向 .................................................................................................................. 85
參考文獻 .................................................................................................................................. 86

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指導教授

邱煥凱(Hwann-Kaeo Chiou)

審核日期

2014-7-2

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