以臭氧電漿活化表面強化異質晶圓鍵合之研究

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姓名

胡惠欽(Hui-Chin Hu) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

以臭氧電漿活化表面強化異質晶圓鍵合之研究
(Improving wafer bonding of dissimilar materials by ozone plasma activated surface)

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至系統瀏覽論文 ( 永不開放)

摘要(中)

晶圓鍵合技術的優勢，在於可以將不同元件在高品質接合介面下結合在一起，具有相當高的便利性與整合性。然而，不同材料之間存在熱膨脹係數差異，會在高溫下產生熱應力，造成晶圓分離，甚至發生破裂。本研究以矽晶片與砷化鎵晶片進行直接晶圓鍵合，探討如何減少熱應力對鍵合晶圓的影響。本實驗分為兩個部分：第一部分為探討電漿活化晶圓表面之差異，得到最佳電漿參數；第二部分為探討晶圓以對稱式鍵合與非對稱式鍵合之差異。實驗結果發現，晶圓經過電漿活化表面後，能有效提升鍵合能，並能在200℃成功鍵合。另外，對稱式晶圓鍵合能有效抵消熱應力，在加熱至350℃時，晶圓仍不會破裂。

摘要(英)

Wafer Bonding Techniques has an advantage that can combine wafer with different materials with great bonding interface. It provides convenience and integration for high-tech industry. However, it will exist thermal expansion mismatch between different materials, great thermal stress may cause sample debond even crack after annealing. In this work, we developed wafer bonding techniques to bond Si and GaAs wafers. First, we use ultraviolet/ozone (UVO) plasma to modify the surface of wafers. Second, we compare the wafers in symmetrical bonded structure with asymmetric bonded structure. In result, wafers could bond together in 200℃ after surface activation. Besides, the wafers in symmetrical bonded structure could effectively counteract heat stress even heat to 350 ℃, and it is still not crack.

關鍵字(中)

★ 晶圓鍵合
★ 表面活化
★ 紫外光-臭氧
★ 氧氣電漿

關鍵字(英)

★ wafer bonding
★ surface activation
★ UV-ozone
★ oxygen plasma

論文目次

總目錄

摘要 ---------------------------------------------------------Ⅰ
致謝 ---------------------------------------------------------Ⅲ
總目錄 -------------------------------------------------------Ⅳ
圖目錄 -------------------------------------------------------Ⅶ
表目錄 -------------------------------------------------------Ⅸ

第一章　緒論 -------------------------------------------------1
　　1-1前言 --------------------------------------------------1
　　1-2研究動機 ----------------------------------------------2
第二章　文獻回顧 ---------------------------------------------3
　　2-1晶圓鍵合技術簡介---------------------------------------3
　　2-2晶圓鍵合機制 ------------------------------------------4
　　　2-2-1凡得瓦力 ------------------------------------------4
　　　2-2-2毛細作用 ------------------------------------------5
　　　2-2-3靜電力 --------------------------------------------5
　　2-3影響晶圓鍵合因素 --------------------------------------6
2-4晶圓鍵合技術分類 --------------------------------------7
2-4-1 直接鍵合法 ---------------------------------------8
2-4-2 低溫鍵合法 ---------------------------------------10
2-4-3 中間介質層鍵合法----------------------------------12
2-4-4 陽極鍵合法 ---------------------------------------13
2-5晶圓鍵合技術應用 --------------------------------------13
　　　2-5-1絕緣層上矽晶圓基板 --------------------------------14
　　　2-5-2矽／砷化鎵 ----------------------------------------15
　　　2-5-3矽／石英 ------------------------------------------16
　　　2-5-4矽／玻璃 ------------------------------------------16
第三章　實驗方法及步驟 ---------------------------------------28
　　3-1實驗架構 ----------------------------------------------28
3-2實驗試片製備 ------------------------------------------29
3-3實驗試片清洗 ------------------------------------------29
3-3-1矽晶片清洗流程 ------------------------------------30
3-3-2砷化鎵晶片清洗流程 --------------------------------31
3-4實驗試片初步接合 --------------------------------------32
3-5高溫退火 ----------------------------------------------32
3-5-1直接晶圓鍵合 --------------------------------------32
3-5-2電漿活化晶圓鍵合 ----------------------------------33
3-5-3非對稱式晶圓鍵合（Si/GaAs）------------------------33
3-5-4對稱式晶圓鍵合（Si/GaAs/Si）-----------------------34
第四章　結果與討論 -------------------------------------------41
4-1直接晶圓鍵合 ------------------------------------------41
4-2電漿活化晶圓鍵合 --------------------------------------41
4-3非對稱式晶圓鍵合 --------------------------------------42
4-4對稱式晶圓鍵合 ----------------------------------------43
第五章　結論 -------------------------------------------------49
參考文獻 -----------------------------------------------------51

圖目錄

圖2-1　凡得瓦力 ----------------------------------------------19
圖2-2　毛細作用 ----------------------------------------------19
圖2-3　靜電力 ------------------------------------------------19
圖2-4　晶圓表面附著粒子對鍵合介面的影響 ----------------------20
圖2-5　親水性與疏水性鍵合強度分布圖 --------------------------20
圖2-6　親水性鍵合示意圖 --------------------------------------21
圖2-7　疏水性鍵合示意圖 --------------------------------------22
圖2-8　真空鍵合與大氣鍵合之退火溫度與鍵合能分布圖 ------------23
圖2-9　陽極鍵合示意圖 ----------------------------------------23
圖2-10　SOI示意圖 -------------------------------------------24
圖2-11　ELTRAN示意圖 ----------------------------------------25
圖2-12　Smart Cut示意圖 -------------------------------------26
圖2-13　矽與砷化鎵之熱膨脹係數分布圖 -------------------------27
圖3-1　固定夾具 ----------------------------------------------39
圖3-2　非對稱式晶圓鍵合示意圖 --------------------------------40
圖3-3　對稱式晶圓鍵合示意圖 ----------------------------------40
圖4-1　電漿活化晶圓鍵合－矽/砷化鎵鍵合介面 -------------------44
圖4-2　非對稱結構於300℃產生破裂現象--------------------------44
圖4-3　鍵合晶圓中的三種熱應力形態與分佈圖 --------------------45
圖4-4　材料受正向應力破壞示意圖 ------------------------------46
圖4-5　材料受掀拉應力與剪應力破壞示意圖 ----------------------47
圖4-6　對稱式晶圓鍵合－矽/砷化鎵鍵合介面 ---------------------48

表目錄

表2-1　晶圓鍵合技術分類 --------------------------------------17
表2-2　RCA溶液成份功用表 ------------------------------------17
表2-3　材料性質比較表 ----------------------------------------18
表3-1　實驗設備 ----------------------------------------------35
表3-2　矽晶片清洗流程 ----------------------------------------36
表3-3　砷化鎵晶片清洗流程 ------------------------------------37
表3-4　紫外光－臭氧電漿參數-----------------------------------38

參考文獻

參考文獻
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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2016-6-16

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