開發具鈦/鋁矽銅歐姆接觸之砷化銦鎵金氧半場效電晶體

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鄒承翰(Cheng-Han Tsou) 查詢紙本館藏

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電機工程學系

論文名稱

開發具鈦/鋁矽銅歐姆接觸之砷化銦鎵金氧半場效電晶體
(Development of InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors with Ti/AlSiCu Ohmic Contact)

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摘要(中)

在過去的五十年來，以矽為主的互補式金氧半積體電路製程技術一直遵循摩爾定律，持續微縮電晶體尺寸並提升元件效能。但是在逐漸接近其物理極限的情況下，最近幾年有許多研究者極力探索各種新材料與新製程的解決方案。在許多新穎材料之中，三五族化合物半導體材料，如砷化鎵與砷化銦鎵，因具備高電子遷移率的優勢，被認為是n型通道電晶體最具潛力的候選材料。然而，此材料通常是以鈦/鉑/金作為歐姆接觸的金屬堆疊結構。在傳統的矽基材製程中，金被視為嚴重汙染源。為了適用於目前的矽基材積體電路製程，本研究開發一無金歐姆接觸金屬堆疊結構，並應用於砷化銦鎵n通道金氧半場效電晶體，以驗證其特性。

本論文研究提出以鈦/鋁矽銅合金作為砷化銦鎵的歐姆接觸金屬堆疊結構。經傳輸線模型(TLM)量測實驗顯示，此金屬堆疊結構的歐姆接觸在無退火的條件下，特徵接觸電阻值(ρc)可低至2.85×10-7 Ω-cm2。熱穩定性與長時間高電流應力測試也證明了其可行性。

本研究將此無退火歐姆接觸金屬堆疊結構應用於平面式與鰭式無接面砷化銦鎵金氧半場效電晶體。所製作之n-InGaAs MOSFET與FinFET通道寬度與閘極長度，分別為1.5 µm/0.7 µm與80 nm/40 nm。所量得之電流開關比(Ion/Ioff)分別約為104與102，最大汲極電流密度分別為216 µA/µm與38 µA/µm，次臨界斜率(S.S.)分別為180 mV/dec與350 mV/dec，且閘極漏電流密度約可低於1×10-3 µA/µm。

由本論文研究之實驗結果顯示，所提出之非合金歐姆接觸金屬堆疊結構極適用於n型砷化銦鎵金氧半場效電晶體，未來將可應用於三五/矽異質整合積體電路之製造。

摘要(英)

For the past five decades, the development of Si-based CMOS manufacturing technology has been following Moore′s Law in shrinking the physical dimension and enhancing the device performance of integrated circuits. As the manufacturing technology approaches its limit, potential solutions in terms of materials and processes are explored extensively in recent years. Among many novel materials, III-V compounds such as GaAs and InGaAs, which have high electron mobility, are considered very promising for n-channel field-effect transistors (FETs). For these arsenide-based materials, Au-based metal stack for ohmic contacts is fairly popular and mature. However, Au is a notorious contaminant in Si processes, and is strictly prohibited in a Si fab. In this work, an Au-free ohmic contact metal stack is proposed and verified on n-channel InGaAs MOSFETs.

The proposed ohimic metal stack on n-type InGaAs consists of Ti (titanium) and AlSiCu (aluminum silicon copper alloy). Transmission line method (transfer length method, TLM) measurements indicate that specific contact resistivity (ρc) as low as 2.85×10-7 Ω-cm2 without post-metal annealing has been achieved without any alloying process. Thermal stability and current stress tests also demonstrate the feasibility of this ohmic contact stack.

This ohmic metal stack is applied to both InGaAs junctionless planar MOSFETs and fin field-effect transistors (FinFETs). The channel width (Wch) and gate length (Lg) of n-InGaAs MOSFETs and FinFETs are 1.5 µm/0.7 µm and 80 nm/40 nm, respectively. The n-InGaAs MOSFETs and FinFETs exhibit an Ion/Ioff ratio of 104 and 102, a maximum drain current density of 216 µA/µm and 38 µA/µm, and a subthreshold swing (S.S.) of 180 mV/dec and 350 mV/dec, respectively. The gate leakage current density of n-InGaAs MOSFET and FinFET is below 1×10-3 µA/µm.

As indicated by the results above, the non-alloyed Au-free ohmic contact stack is very suitable for n-InGaAs MOSFETs, and should be applicable to III-V/Si heterogeneous integrated circuits in the future.

關鍵字(中)

★ 砷化銦鎵
★ 金氧半場效電晶體
★ 鳍式金氧半場效電晶體
★ 無金歐姆接觸
★ 鈦
★ 鋁矽銅合金

關鍵字(英)

★ InGaAs
★ MOSFET
★ FinFET
★ Au-free ohmic contact
★ titanium
★ aluminum silicon copper alloy

論文目次

摘要 i
Abstract ii
誌謝 iv
目錄 v
圖目錄 vii
表目錄 x
第一章緒論 1
1.1 前言 1
1.2 研究動機 3
1.2.1 材料選擇 3
1.2.2 砷化銦鎵歐姆接觸之文獻回顧 7
1.3 論文架構 8
第二章理論基礎與實驗設備 9
2.1 前言 9
2.2 金屬-半導體接面之物理特性 10
2.3 傳輸線模型原理 12
2.3.1 電流傳輸機制 12
2.3.2 特徵接觸電阻值 14
2.4 實驗儀器 16
2.4.1 原子層沉積系統簡介 16
2.4.2 穿透式電子顯微鏡簡介 18
2.4.3 能量色散X射線光譜儀簡介 21
第三章無金歐姆接觸金屬應用於砷化銦鎵之研究 24
3.1 簡介 24
3.2 試片製備與實驗步驟 25
3.3 探討無金歐姆接觸金屬應用於砷化銦鎵之電性變化 30
3.3.1 砷化銦鎵佈植矽對於歐姆接觸電性之分析 30
3.3.2 電流應力對於無金歐姆接觸金屬穩定性之探討 33
3.4 退火處理對於無金歐姆接觸金屬影響之分析 35
3.4.1 無金歐姆接觸金屬熱穩定性之探討 35
3.4.2 退火處理對於金屬-半導體界面影響之高解析TEM圖 38
3.5 本章總結 43
第四章砷化銦鎵平面式與鰭式金氧半場效電晶體製作及特性分析 44
4.1 前言 44
4.2 砷化銦鎵金氧半場效電晶體製程技術開發 45
4.2.1 平面式與鰭式金氧半場效電晶體製作流程 45
4.3 砷化銦鎵金氧半場效電晶體特性分析與討論 52
4.3.1 平面式金氧半場效電晶體之電性探討 52
4.3.2 鰭式金氧半場效電晶體之電性探討 55
4.4 砷化銦鎵金氧半場效電晶體之俯視圖與高解析TEM圖 57
4.4.1 平面式金氧半場效電晶體之俯視圖與高解析TEM圖 57
4.4.2 鰭式金氧半場效電晶體之俯視圖與高解析TEM圖 59
4.5 本章總結 61
第五章總結 62
參考文獻 64

參考文獻

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指導教授

綦振瀛(Jen-Inn Chyi)

審核日期

2018-1-23

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