應用於太赫茲通訊之 40 奈米互補式金氧半二倍頻器設計

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黃昱翔(Yu-Siang Huang) 查詢紙本館藏

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電機工程學系

論文名稱

應用於太赫茲通訊之 40 奈米互補式金氧半二倍頻器設計
(Frequency Doublers Design in 40-nm CMOS for THz Communication Applications)

相關論文

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★ 應用於太赫茲成像系統340-GHz反射器天線系統和85-GHz二倍頻器	★ 使用40奈米互補式金氧半製程之85-GHz功率放大器設計
★ 應用於太赫茲影像雷達及無線通訊系統之40-nm CMOS壓控振盪器

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摘要(中)

本篇論文提出一個應用在340-GHz無線收發機的170-GHz二倍頻器以及應用在200-GHz無線發射機中的100-GHz二倍頻器與200-GHz振幅偏移調變器，本次電路使用TSMC 40奈米互補式金氧半導體製程來實現。170-GHz二倍頻器使用current reuse架構來進行設計，訊號經由170-GHz放大器放大訊號後再由170-GHz二倍頻器將頻率從170-GHz倍頻至340-GHz，170-GHz放大器使用交叉耦合電容提高增益，最後在170-GHz二倍頻器汲極輸出340-GHz訊號，輸出功率達到-7.8 dBm，此時最大轉換增益為-14 dB。
關於100-GHz二倍頻器架構上採用差動輸入對電晶體來實現，最後在100-GHz二倍頻器汲極輸出200-GHz訊號，輸出功率達到2.3 dBm，此時最大轉換增益為-7.6 dB。200-GHz無線發射機架構由100-GHz壓控振盪器產生100-GHz訊號，此時輸出功率為-3.5 dBm，透過100-GHz緩衝器以及100-GHz放大器提高增益後再由100-GHz功率放大器放大功率，此時在100-GHz高輸出功率的情況下驅動100-GHz二倍頻器將頻率倍頻至200-GHz，此處為200-GHz振幅偏移調變器藉由20-Gbps數位訊號來控制振幅偏移調變器來進行調變，數位訊號輸入端為了避免波形失真串聯四級反相器後接上200-GHz振幅偏移調變器，200-GHz調變器的損耗與隔離度分別為3.3 dB與20.2 dB，調變後Post-simulation模擬結果輸出功率0.3 dBm至200-GHz介質共振天線輻射發射，此天線增益為-1.2 dBi，整體200-GHz無線發射機頻寬為6.2 %(193.2-GHz~205.6-GHz)，功耗為230 mW。

摘要(英)

This thesis presents a 170-GHz frequency doubler, a 100-GHz frequency doubler, and a 200-GHz ASK modulator in 40-nm CMOS process. The 170-GHz frequency doubler which is designed with current reuse technique contains a differential amplifier and a frequency doubling NMOS pair. The differential amplifier is used to provide higher gain and the frequency doubling NMOS pair is used to generate second order harmonic signal. This 170-GHz frequency doubler can provide -7.8 dBm output power with the maximum conversion gain of -14 dB.
Both 100-GHz frequency doubler and 200-GHz ASK modulator are applied to 200-GHz transmitter with ASK modulation. The 200-GHz transmitter consists of a 100-GHz voltage-controlled oscillator, buffers, a power amplifier, a frequency doubler, a 200-GHz ASK modulator, and an antenna. The 100-GHz frequency doubler achieves 2.3 dBm output power with the maximum conversion gain of -7.6 dB, which can maximize second order harmonic generation with a differential NMOS pair. The insertion loss of the ASK modulator is 3.3 dB and isolation of the ASK modulator is 20.2 dB. The 100-GHz oscillator and buffers achieve output power of -3.5 dBm. The signal at 200-GHz modulated by 20-Gbps digital data is transmitted to the antenna. The output power of this 200-GHz transmitter is 0.3 dBm. The bandwidth of this 200-GHz transmitter is 6.2 % (193.2-GHz~205.6-GHz) and total consumption of this 200-GHz transmitter is 230 mW.

關鍵字(中)

★ 太赫茲波
★ 毫米波
★ 二倍頻器
★ 振幅偏移調變器
★ 發射機

關鍵字(英)

★ THz wave
★ mm wave
★ doubler
★ modulator
★ transmitter

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 x
第一章緒論 1
1.1 THz通訊應用 1
1.2 二倍頻器架構介紹 4
1.3 研究動機 7
1.4 論文架構 8
第二章 170-GHz二倍頻器 9
2.1 系統架構 9
2.2 170-GHz二倍頻器 10
2.3 電路設計與分析 12
2.3.1 負載推移原理 12
2.3.2 變壓器原理 14
2.3.3 放大器及交叉耦合電容原理 15
2.3.4 二倍頻器原理 17
2.4 設計與佈局考量 22
2.5 模擬結果與討論 25
2.6 總結 31
第三章 100-GHz二倍頻器與 200-GHz ASK調變器 32
3.1系統架構 32
3.2 100-GHz二倍頻器 33
3.2.1 電路設計與分析 34
3.2.2 設計與佈局考量 36
3.2.3 模擬結果與討論 38
3.3 200-GHz振幅偏移調變器 43
3.3.1 電路設計與分析 44
3.3.2 設計與佈局考量 51
3.3.3 模擬結果與討論 51
3.4 200-GHz發射機整體結果 58
3.4.1模擬結果與討論 59
3.4.2量測架設考量 61
3.5總結 63
第四章總結與未來發展 64
4.1 總結 64
4.2 未來發展 65
參考文獻 66

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指導教授

傅家相李俊興(Jia-Shiang Fu Chun-Hsing Li)

審核日期

2019-10-2

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