參考文獻 |
[1] Aurelio Ponz,et al. "Laser Scanner and Camera Fusion for Automatic Obstacle Classification in ADAS Application ", January 2016.
[2] C. Mathas. ADAS takes greater control in 2015.Available:
http://www.edn.com/design/automotive/4437761/ADAS-takes-greater-control-in-2015.
[3] Yoshikazu Takeda et al. "Electron mobility and energy gap of In0.53Ga0.47As on InP substrate " Journal of Applied Physics ,vol. 47, pp 5405, August, 1976.
[4] Xiao Meng. "InGaAs/InAlAs single photon avalanche diodes at 1550 nm and X-ray detectors using III-V semiconductor materials " The University of Sheffield, PhD dissertation, August 2015.
[5] H.Kyushima et al. "Photomultiplier Tube of New Dynode configuration " IEEE Transactions on nuclear science, vol. 41, no. 4. August 1994
[6] H. Bruining, "Physics and Application of Secondary Electron Emission " 1954.
[7] Wikipedia,Photomultiplier tube. Available: https://en.wikipedia.org/wiki/Photomultiplier_tube
[8] J. P. R. David and C. H. Tan. "Material Considerations for Avalanche Photodiodes " IEEE J. Sel. Top. Quant, vol. 14, pp. 998–1009, 2008.
[9] H. Ando et al. "Characteristics of germanium avalanche photodiodes in the wavelength region of 1–1.6 mm " IEEE J. Quantum. Electron, vol.QE-14, no. 11, pp. 804–809, Nov. 1978.
[10] K.Nishida et al. "InGaAsP heterostructure avalanche photodiodes with high avalanche gain " Applied Physics Letters, vol. 35, pp. 251-253, 1979.
[11] J.C. Campbell et al. "High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions " Electronics Letters, vol.19, p.818, 1983.
[12] Lacaita et al. "Single-photon detection beyond 1 microm: performance of commercially available InGaAs/lnP detectors " Appl Opt, vol. 35, pp. 2986-96, Jun 1996.
[13] D. Stucki et al. "Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APDs " Journal of Modern Optics, vol. 48, pp. 1967-1981, 2001.
[14] S. Pellegrini et al. "Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector " IEEE Journal of Quantum Electronics, vol. 42, pp. 397-403, 2006.
[15] J. P. R. David and C. H. Tan. "Material Considerations for Avalanche Photodiodes " IEEE J. Sel. Top. Quant, vol. 14, pp. 998–1009, 2008.
[16] S. M. Sze and K. K. Ng. Physics of Semiconductor Devices, 3rd. Wiley, 2007.
[17] A. I. Nurhadi and N. R. Syambas, "Quantum Key Distribution (QKD) Protocols: A Survey " 2018 4th International Conference on Wireless and Telematics (ICWT), Nusa Dua, pp. 1-5, 2018.
[18] A. L. Lacaita, F. Zappa, S. Bigliardi and M. Manfredi, "On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices, " in IEEE Transactions on Electron Devices, vol. 40, no. 3, pp. 577-582, March 1993.
[19] Ivan Rech, Antonino Ingargiola, Roberto Spinelli, Ivan Labanca, Stefano Marangoni, Massimo Ghioni, and Sergio Cova, "Optical crosstalk in single photon avalanche diode arrays: a new complete model " Opt. Express 16, pp. 8381-8394, 2008.
[20] N. Calandri, M. Sanzaro, L. Motta, C. Savoia and A. Tosi, "Optical Crosstalk in InGaAs/InP SPAD Array: Analysis and Reduction With FIB-Etched Trenches," in IEEE Photonics Technology Letters, vol. 28, no. 16, pp. 1767-1770, 15 Aug.15, 2016.
[21] Jandieri, K., Rubel, O., Baranovskii, S.D. et al. Lucky-drift model for impact ionization in amorphous semiconductors. J Mater Sci, Mater Electron 20, pp. 221–225, 2009.
[22] A. G. CHYNOWETH AND K. G. MCKAY Bell Telephone Laboratories, Murray Hill, Rem Jersey. "Photon Emission from Avalanche Breakdown in Silicon " Phys. Rev, vol. 102, pp. 369-376, April 1956.
[23] Jeff Bude, Nobuyuki Sano, and Akira Yoshii, "Hot-carrier luminescence in Si" Phys. Rev, vol. 45, pp. 5848-5856, March 1956.
[24] S. Pellegrini et al., "Design and performance of an InGaAs-InP single-photon avalanche diode detector " IEEE Journal of Quantum Electronics, vol. 42, no. 4, pp. 397-403, April 2006.
[25] Jack Jia-Sheng Huang, H. S. Chang, Yu-Heng Jan, C. J. Ni, H. S. Chen, and Emin Chou, "Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics " Advances in OptoElectronics, vol 2017 Article,12 Jan 2017.
[26] Richard D. Younger, K. Alex McIntosh, Joseph W. Chludzinski, Douglas C. Oakley, Leonard J. Mahoney, Joseph E. Funk, Joseph P. Donnelly, and S. Verghese Lincoln Laboratory, "Crosstalk Analysis of Integrated Geiger-mode Avalanche Photodiode Focal Plane Arrays " Proc. SPIE 7320, Advanced Photon Counting Techniques III, 73200Q , 29 April 2009.
[27] Mingguo Liu et al. " Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation" IEEE Photonics Technology Letters , vol 19 , Issue 6 , March15, 2007.
[28] Lenox, Cynthia et al. "Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz " IEEE Photonics Technology Letters, vol. 11, pp. 1162-1164, 1999.
[29] Mahdi Zavvari, Kambiz Abedi, and Mohammad Karimi, "Design of resonant cavity structure for efficient high-temperature operation of single-photon avalanche photodiodes," Appl. Opt. 53, pp. 3311-3317, 2014. |