參考文獻 |
[1] O. Ambacher, et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” Journal of Applied Physics, vol. 85, no. 6, March 1999.
[2] Remziye Tülek, et al., “Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/ AlN/GaN two-dimensional electron gas heterostructures,” Journal of Applied Physics, vol. 105, no. 1, January 2009.
[3] M. Gonschorek, et al., “High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures,” Applied Physics Letters, vol. 89, March 2006.
[4] L. Shen et al., "AlGaN/AlN/GaN high-power microwave HEMT," IEEE Electron Device Letters, vol. 22, no. 10, pp. 457-459, October 2001.
[5] N Ketteniss, et al., “Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates,” Semiconductor Science and Technology, vol. 25, no. 7, June 2010.
[6] R. Aubry, et al., "ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT," IEEE Electron Device Letters, vol. 37, no. 5, pp. 629-632, May 2016.
[7] WEN WANG, et al., "Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier," IEEE Journal of the Electron Devices Society, vol. 6, pp. 360-364, December 2018.
[8] E. Dogmus, et al., “InAlGaN/GaN HEMTs at Cryogenic Temperatures,” Electronics, vol. 5, no. 4, pp. 31, Jun. 2016.
[9] DAI SHU JUN, “Epitaxial Growth and Device Fabrication of Si-based AlInGaN/AIN/GaN HEMT,” USTC, 2018.
[10] Narihiko Maeda, et al., “Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures,” Japanese Journal of Applied Physics, vol. 46, no. 2, February 2007.
[11] S. Arulkumaran, et al., “Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4 , and silicon oxynitride,” Applied Physics Letters, vol. 84, no. 4, January 2004.
[12] M.C.A.M. Koolen, et al., “An improved de-embedding technique for on-wafer high-frequency characterization,” IEEE 1991 Bipolar Circuits and Technology Meeting, 1991.
[13] P. M. White, et al., "Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements," IEEE Microwave and Guided Wave Letters, vol. 3, no. 12, pp. 453-454, December 1993
[14] Jing Lu, et al., “A new small-signal modeling and extraction method in AlGaN/GaN HEMTs,” Solid-State Electronics, vol. 52, no. 1, pp. 115-120, January 2008.
[15] M. Berroth, et al., "Broad-band determination of the FET small-signal equivalent circuit," IEEE Transactions on Microwave Theory and Techniques, vol. 38, no. 7, pp. 891-895, July 1990.
[16] M. T. Yang, et al., "Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz," IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 369-372, June 2003.
[17] Dongping Xiao, et al., “Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs,” Solid-State Electronics, vol. 53, no. 2, pp. 185-189, February 2009.
[18] Syu-Jhih Wei, “The Fabrication of High-Power and High-Frequency AlGaN/GaN HEMTs and Development of Gate Length Reducing Process,” NTU, 2018.
[19] H.W.Then, et al., "High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs," 2015 Symposium on VLSI Technology, pp. 202-203, June 2015.
[20] S. Arulkumaran, et al., "High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate," IEEE Electron Device Letters, vol. 35, no. 10, pp. 992-994, October 2014.
[21] S. D. Nsele, et al., "Noise characteristics of AlInN/GaN HEMTs at microwave frequencies," 2013 22nd International Conference on Noise and Fluctuations, pp. 1-4, June 2013.
[22] Ronghua Wang, et al., "Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance," IEEE Electron Device Letters, vol. 31, no. 12, pp. 1383-1385, December 2010.
[23] F. Medjdoub, et al., "High frequency high breakdown voltage GaN transistors," 2015 IEEE International Electron Devices Meeting, pp. 217-220, December 2015.
[24] P.D. Christy, et al., “High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate,” Electronic Letters, vol. 51, no. 17, pp. 1366 - 1368, August 2015.
[25] Peter Kordoš, et al., “RF Performance of InAlN/GaN HFETs and MOSHFETs With fT × LG up to 21 GHz·μm,” IEEE Electron Device Letters, vol. 31, no. 3, pp. 180-182, March 2010.
[26] S. Arulkumaran, et al., “Enhanced Breakdown Voltage With High Johnson’s Figure-of-Merit in 0.3-μm T-gate AlGaN/GaN HEMTs on Silicon by (NH4)2Sx Treatment,” IEEE Electron Device Letters, vol. 34, no. 11, pp. 1364-1366, Nov. 2013.
[27] S. Y. Liao, et al., “Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures,” Journal of Nanoscience and Nanotechnology, vol. 14, no. 8, pp. 6243-6246, August 2014.
[28] Ahmet Toprak, et al., “Effect of Gate Length on the DC and RF Performance of GaN HEMT Devices,” American Journal of Engineering Research, vol. 4, no. 9, pp-47-53, 2015.
[29] L. T. Xuan et al., "Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications," 2016 11th European Microwave Integrated Circuits Conference, pp. 65-68, Octorber 2016.
[30] Steven C. Binari, et al., "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 465-471, March 2001.
[31] R. Yeats, et al., "Gate slow transients in GaAs MESFETs-causes, cures, and impact on circuits," International Electron Devices Meeting, pp. 842-845, December 1988.
[32] J. C. Huang, et al., "An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications," IEEE Transactions on Microwave Theory and Techniques, vol. 41, no. 5, pp. 752-759, May 1993.
[33] S. Huang, et al., "Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges," IEEE Electron Device Letters, vol. 34, no. 2, pp. 193-195, February 2013. |