原子層沉積法製備氧化鋅薄膜於全無機綠光鈣鈦礦發光二極體之應用研究

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游柏彥(Bo-Yen Yu) 查詢紙本館藏

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能源工程研究所

論文名稱

原子層沉積法製備氧化鋅薄膜於全無機綠光鈣鈦礦發光二極體之應用研究
(The Study on Zinc Oxide Layer by Atomic Layer Deposition in All-inorganic Green Light Perovskite Light Emitting Diode)

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至系統瀏覽論文 (2024-8-1以後開放)

摘要(中)

本次實驗以先前實驗室研究單源熱蒸鍍鈣鈦礦發光二極體的結果為基礎，並將其中以溶液法製備的氧化鋅層以原子層沉積法進行替換，在比較以原子層沉積法與溶液法後，確認了在相同結構下使用原子層沉積法的元件不僅改善了缺陷且擁有更高的性能，由此可以認為原子層沉積法足以取代過去使用的溶液法。
接著，由於原子層沉積法所沉積的氧化鋅薄膜已具有足夠的平整性提供鈣鈦礦層良好的沉積條件，因此對於在原先結構中只為提供平整條件的底部三氧化鉬層便失去了必要性，在比較有無移除三氧化鉬層的元件發光情形後，觀察到移除了三氧化鉬層的元件具有相同甚至略高的亮度，在確認了氧化鋅層確實能提供足夠平整性，便可移除底部的三氧化鉬層以節省製程時間。由於氧化鋅層具有隨厚度增加，電性也提升的特性，因此針對氧化鋅的厚度進行研究，觀察到厚度在800 Cycle(約180nm)下的氧化鋅擁有最佳性能，可以認為在此厚度下，元件底部的二氧化鈦緻密層對元件性能不具有明顯影響力，但在比較移除前後的元件性能後，觀察到移除二氧化鈦緻密層後元件的輝度有大幅提升，至此已經移除了製程中全部的溶液法，增加了製程穩定性。
最後，在確認CsPbBr3主動層具有足夠的穩定性，可承受刮塗碳電極時其溶液內具有的有機溶劑，便將元件頂部的三氧化鉬層移除，最終，元件的結構為ITO/ALD-ZnO/CsPbBr3/C，本次利用原子層沉積法沉積的氧化鋅對元件結構改善的研究，最後在簡化結構同時節省製程時間的情況下，元件的最大亮度為1380 cd/m2，發光波長為527.2nm。

摘要(英)

This experiment is based on the results of the previous laboratory research on the single-source thermal evaporation of perovskite light-emitting diodes, and the zinc oxide layer prepared by the solution method is replaced by the atomic layer deposition method. In comparison, the atomic layer deposition method is used.After the method and the solution method, it is confirmed that the element using the atomic layer deposition method under the same structure not only improves the defects but also has higher performance, it can be considered that the atomic layer deposition method is sufficient to replace the solution method used in the past.
Then, because the zinc oxide film deposited by the atomic layer deposition method has sufficient flatness to provide good deposition conditions for the perovskite layer, it is no longer necessary for the bottom molybdenum trioxide layer in the original structure to provide flatness conditions. After comparing the light emission of the device with or without the molybdenum trioxide layer removed, it is observed that the device with the molybdenum trioxide layer removed has the same or slightly higher brightness. After confirming that the zinc oxide layer can indeed provide sufficient flatness, it can be Remove the molybdenum trioxide layer at the bottom to save process time.Since the zinc oxide layer has the　characteristics of increasing its electrical properties as the thickness increases, the thickness of zinc oxide has been studied and it is observed that zinc oxide with a thickness of 800 Cycle (about 180nm) has the best performance, and it can be considered that the thickness is below this thickness.The dense layer of titanium dioxide at the bottom of the device does not have a significant impact on the performance of the device, but after comparing the performance of the device before and after removal, it is observed that the brightness of the device after removing the dense layer of titanium dioxide has been greatly improved. So far, all the components in the process have been removed.The solution method increases the process stability.
Finally, after confirming that the CsPbBr3 active layer is sufficiently stable to withstand the corrosion of the organic solvent when the carbon electrode is scraped, we removed the molybdenum trioxide layer on the top of the device. Finally, the structure of the device is ITO/ALD -ZnO/CsPbBr3/C, the maximum brightness is 1380 cd/m2, and the emission wavelength is 527.2nm. This time, the zinc oxide deposited by atomic deposition method is used to improve the structure of the device. Finally, the structure is simplified and the process time is saved.

關鍵字(中)

★ 鈣鈦礦
★ 氧化鋅
★ 原子層沉積
★ 鈣鈦礦發光二極體
★ 綠光

關鍵字(英)

★ Perovskite
★ Zinc Oxide
★ Atomic Layer Deposition
★ Perovskite Light Emitting Diode
★ Green Light

論文目次

目錄
摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 xiv
第1章緒論 1
1-1前言 1
1-2鈣鈦礦介紹 2
1-3鈣鈦礦材料之介紹 3
1-4鹵化物鈣鈦礦薄膜製造方式與應用 6
1-4-1一步溶液旋塗法 6
1-4-2多步溶液沉積法 7
1-4-3溶液-蒸鍍混合法 8
1-4-4雙源共蒸鍍沉積法 9
1-4-5雙源逐步沉積法 9
1-4-6單源共蒸鍍沉積法 10
1-4-7 原子層沉積法 11
1-5鈣鈦礦LED元件中的電子傳輸層材料 12
1-5-1 有機電子傳輸層材料 12
1-5-2 無機電子傳輸層材料 14
1-6氧化鋅材料介紹 16
1-6-1 氧化鋅薄膜製作方式 17
1-6- 1-1 水熱法 17
1-6-1-2 有機金屬化學氣相沉積 18
1-6-1-3 電泳沉積 19
1-6-1-4 脈衝雷射沉積 19
1-6-1-5 濺射沉積 19
1-6-1-6 溶膠凝膠 20
1-6-1-7 原子層沉積 21
1-6-1-8 噴霧熱裂解 22
1-6-1-9 分子束磊晶 22
1-7氧化鋅薄膜應用於鈣鈦礦元件 23
1-8 研究動機 26
第2章實驗方法 27
2-1實驗材料及儀器 27
2-1-1實驗材料 27
2-1-2實驗儀器 27
2-2實驗步驟 29
2-2-1 ITO導電玻璃清洗 29
2-2-2 緻密層二氧化鈦(TiO2)合成與塗佈 29
2-2-3 氧化鋅(ZnO)合成與沉積 29
2-2-4 CsPbBr3單源熱蒸鍍 30
2-2-5 MoOx蒸鍍 30
2-2-6碳膠電極塗佈 30
2-2-7LED元件量測 30
2-3實驗儀器原理 31
2-3-1 XRD量測原理 31
2-3-2 UV-vis量測原理 31
2-3-3 SEM量測原理 31
2-3-4 UPS量測原理 32
2-3-5 ALD原理 33
第3章結果與討論 34
3-1 溶液法ZnO應用於CsPbBr3 PeLED製作 34
3-2 ZnO溶液法與原子沉積法比較 36
3-3 移除PeLED底部MoO3層之研究 42
3-4 對PeLED中ALD-ZnO層之厚度研究 44
3-5 對PeLED底部c-TiO2層之研究 49
3-6 移除PeLED頂部MoO3之研究 54
3-7 ALD-ZnO層厚度對PeLED影響之研究 56
第4章結論 61
參考文獻 62

參考文獻

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審核日期

2021-10-28

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