應用於n77 頻段之氮化鎵/砷化鎵積體被動元件多悌功率放大器暨使用B類連續技術於C/Ka頻帶氮化鎵/砷化鎵功率放大器之研製

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姓名

陳冠州(Kuan-Chou Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

應用於n77 頻段之氮化鎵/砷化鎵積體被動元件多悌功率放大器暨使用B類連續技術於C/Ka頻帶氮化鎵/砷化鎵功率放大器之研製
(Implementations on n77-band GaN Doherty Power Amplifier with GaAs Integrated Passive Devices and C/Ka bands GaN/GaAs Power Amplifiers with Class-B Continuous Mode Techniques)

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★ 應用於K頻段之單向化全積體整合功率放大器與應用於V頻段之寬頻功率放大器研製	★ 應用於C/X頻段全積體整合之互補式金氧半導體寬頻低功耗降頻器與寬頻功率混頻器之研製

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摘要(中)

本論文使用穩懋半導體公司(WINTM)所提供之0.25-µm GaN/SiC 製程與砷化鎵積體被動元件 (WIPD, WIN Integrated Passive Device) 製程以及0.15-µm InGaAs pHEMT 製程，分別進行n77頻段多悌功率放大器、C頻段B類連續模式功率放大器以及Ka頻段寬頻功率放大器之設計。
第二章提出採用多悌負載調變網路於氮化鎵/砷化鎵積體被動元件功率放大器之研究，來改善一般功率放大器回退效率不佳的問題，量測結果顯示3-dB 頻寬為 3.1 ~ 4.0 GHz，最佳傳輸增益為10.7 dB，因為量測的限制，大訊號量測無法提供完整數據，模擬結果顯示了在3.3 ~ 4.1 GHz的頻帶內，飽和效率約68.3 %，回退6 dB時的效率，約為51 %，氮化鎵晶片面積為0.77 (1.6 × 0.48) mm2，砷化鎵晶片面積為5.08 (1.36 × 1.87) mm2。
第三章提出應用於C頻段寬頻高效率氮化鎵功率放大器，透過偏壓挑選的方式，改善AM-AM的線性度，輸出匹配電路利用B類連續技術的方式，完成基頻與二次諧波項的匹配，來達到寬頻且高效率之功率放大器。量測結果顯示最佳傳輸增益為20.7 dB，3 dB頻寬為4.1 – 5.0 GHz，飽和輸出功率為 38 dBm，功率附加效率最高可達 40 %，晶片面積為4.86 (2.76 × 1.76) mm2。
第四章提出應用於 Ka 頻段寬頻高效率砷化鎵功率放大器，透過偏壓挑選的方式，提供一種不損失增益與效率的前提下，達到最好的增益、輸出功率與效率的權衡，輸出匹配電路沿用連續B類技術，達到寬頻且高效率之功率放大器。量測結果顯示最佳傳輸增益為18.8 dB，3 dB頻寬為25 – 30.2 GHz，飽和輸出功率為 25.5 dBm，功率附加效率最高可達 29.7 %，晶片面積為1.08 (1.32 × 0.82) mm2。

摘要(英)

The thesis developed three power amplifiers that were designed in WINTM 0.25-µm GaN/SiC, GaAs integrated passive devices (IPD), and 0.15-µm GaAs processes. The first design is a Doherty power amplifier (DPA) for n77 band (3.3-4.2 GHz) application in GaN and GaAs IPD processes, the second one is a continuous class-B mode power amplifier for C band operation in GaN/SiC process and the third one is a continuous class-B mode power amplifier for Ka band operation in 0.15 m GaAs pHEMT process.
Chapter 2 presents an n77-band DPA in GaN and GaAs IPD processes. To improve the drawback of poor efficiency at power back-off in conventional power amplifier. The measurements achieve a peak power gain of 10.7 dB across a 3-dB bandwidth from 3.1 to 4.0 GHz. Due to measurement limitation, large signal measurement cannot provide complete data for now. The simulation results show a saturated drain efficiency of 68.3 %, and a drain efficiency at back-off 6 dB of 51 % in n77 band. The chip area of the GaN die is 0.77 (1.6 × 0.48) mm2, and the chip area of the GaAs IPD is 5.08 (1.36 × 1.87) mm2.
Chapter 3 presents a C band broadband high efficiency power amplifier in GaN/SiC process. According to the analysis of large signal transconductance, the appropriate bias voltage is selected to improve the AM-AM linearity. The high-efficiency and broadband performances are achieved by using continuous Class-B mode for the fundamental and second harmonics output matching network. The measurement results show that the peak power gain is 20.7 dB, the 3-dB bandwidth is from 4.1 to 5.0 GHz, the saturated output power is 38 dBm, the peak power added efficiency is to 40 %, and the chip area is 4.86 (2.76 × 1.76) mm2.
Chapter 4 presents a Ka band broadband high efficiency power amplifier in GaAs process. The power amplifier achieves the best trade-off among gain, output power and efficiency without loss of the gain and efficiency via proper bias selections. The high-efficiency and broadband performances are achieved by using continuous Class-B mode for fundamental and second harmonics output matching network. The measurement results show that the peak power gain is 18.8 dB, the 3-dB bandwidth is from 25 to 30.2 GHz, the saturated output power is 25.5 dBm, the peak power added efficiency is to 29.7%, and the chip area is 1.08 (1.32 × 0.82) mm2.

關鍵字(中)

★ 功率放大器
★ 氮化鎵
★ 砷化鎵
★ B類連續模式
★ 多悌

關鍵字(英)

★ power amplifier
★ GaN
★ GaAs
★ Class-B Continuous Mode
★ Doherty

論文目次

摘要 i
Abstract ii
致謝 iv
目錄 vi
圖目錄 viii
表目錄 xii
第一章緒論 1
1-1 研究動機 1
1-2 研究成果 2
1-3 章節簡介 2
第二章多悌功率放大器 3
2-1 研究現況 3
2-2 功率放大器操作簡介 4
2-3 多悌負載調變介紹 8
2-4 應用於n77頻段之氮化鎵/砷化鎵積體被動元件多悌功率放大器 13
2-4-1 架構圖 13
2-4-2 電路圖 14
2-4-3 輸出匹配設計 15
2-4-4 輸入端功率分配器設計 20
2-4-5 電路模擬與量測結果 23
2-4-6 結果比較與討論 31
第三章應用B類連續技術於C頻段氮化鎵功率放大器 34
3-1 氮化鎵功率放大器研究現況 34
3-2 連續模式技術介紹 35
3-3 應用B類連續技術於C頻段氮化鎵功率放大器設計 38
3-3-1 電路圖 38
3-3-2 電晶體特性評估 39
3-3-3 輸出匹配設計 42
3-3-4 電路模擬與量測結果 47
3-3-5 結果比較與討論 61
第四章應用B類連續技術於Ka頻段砷化鎵功率放大器 65
4-1 毫米波功率放大器研究現況 65
4-2 應用B類連續技術於Ka頻段砷化鎵功率放大器設計 66
4-2-1 電路圖 66
4-2-2 電晶體特性評估 67
4-2-3 輸出匹配網路設計 72
4-2-4 電路模擬與量測結果 76
4-2-5 結果比較與討論 90
第五章結論 93
5-1 總結 93
5-2 未來方向 94
參考文獻 95

參考文獻

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指導教授

邱煥凱(Hwann-Kaeo Chiou)

審核日期

2021-8-26

推文