低溫生長大面積二維二硫化鉬薄膜之研究

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姓名

黃柏智(Bo-Zhi Huang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

低溫生長大面積二維二硫化鉬薄膜之研究
(Study on growth large area two dimension MoS2 thin films at low temperature)

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至系統瀏覽論文 (2027-8-1以後開放)

摘要(中)

隨著電晶體尺寸不斷縮小，遵循摩爾定律的難度越高，因此二維材料的研究逐漸興起，就是為了突破物理極限並取代矽等傳統半導體材料，因此本論文主要研究以低溫生長大面積二維二硫化鉬薄膜，成為下一世代半導體材料的選擇。
本研究利用低壓化學氣相沉積法，於藍寶石基板上生長MoS2薄膜，並藉由助長劑的輔助，使生長溫度下降，量測拉曼位移之△k為21cm-1以下的單層結構，PL及吸收光譜量測得出MoS2為直接能隙的特性，AFM量測為0.75nm的單層厚度，HR-TEM量測層間距為0.65nm，MoS2薄膜轉印於SiO2/Si基板其XPS量測未含有助長劑之訊號，由於助長劑於生長時所產生的水溶性層，有助於轉印製程，但同時也影響MoS2薄膜於長時間的保存，藉由可靠性測試後，發現轉印後的MoS2薄膜受於水氣之影響大幅降低，可長達14天的存放，於電性量測中電流開關比約為107、次臨界擺幅約為95mV/decade及電子遷移率約為5cm2/Vs。
該研究證明出以助長劑輔助生長的MoS2薄膜，可達到高品質、大面積、均勻性良好及單層結構的結果，且轉印於SiO2/Si基板上可以有效地保存，更廣泛的應用於電子及光電元件。

摘要(英)

As the transistor size shrinking, it is more difficult to follow Moore’s Law. Therefore, the research on two-dimensional materials is gradually emerging to break the physical limit and replace traditional semiconductor materials such as silicon. In this paper, the large area two dimension molybdenum disulfide (MoS2) was grown at low temperature, become one for the choices of next generation semiconductor materials.
The low-pressure chemical vapor deposition method (LPCVD) was applied to grow MoS2 thin films on sapphire substrates .The growth temperature is reduced by using the seeding promoters. The △k of the measured Raman shifting is below 21cm-1, which confirmed that the MoS2 was a monolayer. PL and absorption spectrum measurements confirmed that the MoS2 is a direct bandgap material. The monolayer thickness was 0.750nm measured by AFM, and the interlayer spacing was 0.650nm measured by HR-TEM. The MoS2 film was transferred to the SiO2/Si substrate, and the XPS measurement showed the results were without the signal of the seeding promoter. Due to the water-soluble layer produced by the seeding promoter the process growth, It is helpful for the transfer process, but also affects the long-term storage of the MoS2 films. After the reliability test, it is found that the life-time of the transferred MoS2 films is greatly improved, and the storage time can be preserved up to 14 days. In the electrical measurement of the MoS2 device, Ion/Ioff is about 107, the subthreshold swing is about 95 mV/decade and the mobility is about 5 cm2/Vs.
Finally, the MoS2 films grown with seeding promoters can achieve high quality, large area, good uniformity and monolayer structure, and can be effectively preserved when transferred to SiO2/Si substrate for electronic and optoelectronic applications.

關鍵字(中)

★ 二維材料
★ 二硫化鉬
★ 化學氣相沉積法
★ 低溫生長
★ 大面積
★ 單層

關鍵字(英)

論文目次

摘要 v
Abstract vi
誌謝 vii
目錄 viii
圖目錄 xi
表目錄 xvi
1 第一章、緒論 1
1-1 前言 1
1-2 研究動機與目的 2
1-3 研究目的與方法 4
2 第二章、基礎理論及文獻回顧 5
2-1 二硫化鉬的特性 5
2-1-1 二硫化鉬的晶體結構 5
2-1-2 二硫化鉬的光學特性 8
2-2 文獻回顧 9
2-2-1 二硫化鉬的製備方式 9
2-2-2 生長二硫化鉬的助長劑 14
3 第三章、實驗架構與分析儀器介紹 19
3-1 實驗方法 19
3-1-1 低壓化學氣相沉積法(Low Pressure Chemical Vapor Deposition, LPCVD) 19
3-1-2 實驗流程 19
3-1-3 二硫化鉬薄膜轉印製程流程 21
3-2 分析儀器 22
3-2-1 拉曼光譜儀(Raman Spectrometer) 22
3-2-2 光致發光光譜儀(Photoluminescence Spectrometer, PL) 23
3-2-3 光學顯微鏡(Optical Microscope, OM) 24
3-2-4 紫外-可見-近紅外光譜儀(UV-Visible-NIR Spectrometer) 24
3-2-5 高解析度穿透式電子顯微鏡(High Resolution-Transmission Electron Microscope, HR-TEM) 25
3-2-6 X射線光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS) 25
3-2-7 原子力顯微鏡(Atomic Force Microscope, AFM) 25
4 第四章、實驗結果 26
4-1 有無氯化鈉生長二硫化鉬薄膜之分析 26
4-1-1 於800℃生長二硫化鉬薄膜有無氯化鈉之分析 26
4-1-2 以氯化鈉生長二硫化鉬薄膜轉印之分析 28
4-1-3 調變生長溫度之分析 30
4-2 調變生長溫度與硫化時間點之分析 32
4-2-1 於550℃生長並調變硫化時間點之分析 32
4-2-2 於600℃生長並調變硫化時間點之分析 34
4-2-3 於650℃生長並調變硫化時間點之分析 36
4-3 二硫化鉬之大面積及均勻性之分析 38
4-3-1 調變三氧化鉬及氯化鈉重量之分析 39
4-3-2 調變氬氣流量之分析 41
4-3-3 提升三氧化鉬及氯化鈉重量之分析 43
4-4 二硫化鉬薄膜轉印之分析 48
4-4-1 元素與表面分析 48
4-4-2 電性量測 50
4-5 二硫化鉬薄膜之可靠度分析 52
4-5-1 無氯化鈉二硫化鉬薄膜之分析 52
4-5-2 有氯化鈉二硫化鉬薄膜之分析 53
4-5-3 二硫化鉬薄膜轉印至二氧化矽基板之分析 56
5 第五章、結論與未來展望 60
5-1 實驗結論 60
5-2 未來展望 62
參考文獻 63

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2022-7-19

推文