以可卸式PN接面對矽晶進行陽極氧化之研究

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姓名

莊淨茹(Jing-Ru Chuang) 查詢紙本館藏

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機械工程學系

論文名稱

以可卸式PN接面對矽晶進行陽極氧化之研究
(Investigation of Anodization of Silicon by Detachable PN Junction)

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摘要(中)

由於N 型矽的主要載流子是電子，施加電場後飄移速率為電洞三倍，因此經過陽極氧化產生量子侷限的奈米結構後非常適合製作矽光子元件。但由於N 型矽基板缺乏陽極氧化的要素¬—電洞，製作多孔矽極為困難，因此藉由疏水性晶圓鍵合技術將P 型矽作為中介電極，在N 型矽背面形成可拆卸式的PN 接面後再接電極，這將轉換N 型矽中的電洞流成主控電流，提高基板表面陽極氧化效率，製程結束後作為中介電極的P 型矽能輕易移除，使處理後的N 型矽保持乾淨且無污染。
本研究使用氫氟酸:酒精比例1:1，以固定電流500 mA進行電化學蝕刻30分鐘，並使用場發射掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、光致發光光譜儀(PL)做進一步分析，以不同摻雜濃度的P型矽晶圓輔助N型矽晶圓進行蝕刻，後續觀察N型矽晶圓所生成多孔矽之影響。

摘要(英)

Since the main carriers of N-type silicon are electrons, and the drift rate is three times that of holes after applying an electric field, it is very suitable for the fabrication of silicon photonic devices after anodizing to produce quantum-confined nanostructures. However, due to the lack of anodes on N-type silicon substrates The element of oxidation—holes, is difficult to make porous silicon. Therefore, the hydrophobic wafer bonding technology uses the P-type silicon as the intermediate electrode. The detachable PN junction is formed on the back of the N-type silicon, and then the electrode is connected. This will convert the holes in the N-type silicon to flow into the main control current, improve the efficiency of anodization on the substrate surface, and the P-type silicon as an intermediary electrode can be easily removed after the process, keeping the processed N-type silicon clean and free of contamination.
In this study, electrochemical etching was performed at a fixed current of 500 mA for 30 min using a hydrofluoric acid: alcohol ratio of 1:1, and field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence spectrometer (PL) For further analysis, P-type silicon wafers with different doping concentrations were used to assist N-type silicon wafers for etching, and the effect of porous silicon generated by N-type silicon wafers was subsequently observed.

關鍵字(中)

★ PN接面
★ 疏水性晶圓鍵合
★ 陽極氧化
★ 多孔矽

關鍵字(英)

★ PN junction
★ hydrophobic wafer bonding
★ anodization
★ porous silicon

論文目次

摘要..............................................................................................................................................i
Abstract ......................................................................................................................................ii
誌謝...........................................................................................................................................iii
目錄............................................................................................................................................iv
圖目錄......................................................................................................................................vi
表目錄..................................................................................................................................... viii
第一章緒論...............................................................................................................................1
1-1 研究背景.....................................................................................................................1
1-2 多孔矽製程.................................................................................................................3
1-2-1 乾式蝕刻法......................................................................................................3
1-2-2 濕式蝕刻法......................................................................................................3
1-2-3 電化學蝕刻法..................................................................................................4
1-3 研究動機與目的.........................................................................................................5
第二章原理與文獻回顧...........................................................................................................6
2-1 多孔矽理論模型.........................................................................................................6
2-1-1 貝爾模型(The Beale Model)............................................................................6
2-1-2 擴散限制模型(The Diffusion-Limited Model)................................................7
2-1-3 量子模型(The Quantum Model)......................................................................8
2-2 多孔矽形成機制.........................................................................................................9
2-2-1 氫氧根(hydroxyl)為底之蝕刻機制.................................................................9
2-2-2 氫氟根(hydrofluoride)為底之蝕刻機制.......................................................10
2-2-3 蕭特基接面原理與電化學蝕刻關係............................................................11
2-2-4 PN接面與電化學蝕刻關係............................................................................13
第三章實驗方法與步驟.........................................................................................................14
3-1 矽晶圓試片與清洗流程...........................................................................................14
3-2 電化學蝕刻材料及設備介紹...................................................................................17
3-3 分析儀器介紹...........................................................................................................18
3-4 實驗步驟...................................................................................................................20
第四章結果與討論.................................................................................................................23
4-1 N型矽晶圓於日光燈及UV燈下觀察結果................................................................23
4-2 N型多孔矽FE-SEM表面及剖面觀察結果...............................................................26
4-3 N++型多孔矽TEM剖面觀察結果.............................................................................35
4-4 多孔矽光激發光譜(Photoluminescence, PL) ..........................................................37
第五章結論.............................................................................................................................43
第六章參考文獻.....................................................................................................................44

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2022-7-5

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