| 摘要(英) |
The advent of the fifth-generation mobile communication network will provide greater data volume and higher. The transmission rate, shorter latency, and support for more communication device connections. In order to achieve the vision of the next-generation mobile communication system, whether in the physical layer, media access control layer, network layer, or application layer all require more advanced technology.
In this paper, we will design power amplifiers in the sub-6 GHz, respectively, using the WIN 0.25-µm GaN HEMT process to achieve. In the second chapter of this paper, we use the WIN 0.25-µm GaN HEMT process to design a 3.5-GHz power combine amplifier for 5G small-cell base stations, with an operating frequency range of 3.3 GHz to 3.8 GHz. This circuit is composed of two single-stage power amplifiers. The power divider and power combiner of the impedance Wilkinson transforming structure are used for power combining. The power divider and power combiner of impedance transforming Wilkinson are maded with on chip, and the chip area is 1×2 mm2. The simulation results of power combine amplifier show that the small signal is within the operating frequency range of 3.3--3.8 GHz, the gain and input return loss are greater than 11.9 dB and 10.6 dB, and the output return loss are greater than 7.6 dB respectively, and the large signal is at 3.5 GHz, OP1dB and OP1dB The following PAE are 38.2 dBm (6.6 W) and 53 %, OP1dB the following DE is 56.3 %
In the third chapter of this paper, we will perform power combine amplifier measurements and circuit detection and re-simulation. The measurement results show that the small signal of the single power amplifier is within the operating frequency range of 3.3--3.8 GHz, the gain and input return loss are respectively greater than 10.6 dB and 12.4 dB, and the large signal at 3.5 GHz, the PAE under OP1dB and OP1dB are 35.1 dBm (3.2 W) and 33.1 %, OP1dB the following DE is 35.5 % .The measurement results are in line with the power amplifier performance target of the active phased array at the transmitting end of the 5G small-cell base stations. |
| 參考文獻 |
[1] L.-Y. Chen, “Design of 3.5-GHz GaN power amplifiers and a millimeter-wave GaAs power amplifier,” Master’s thesis, National Central University.
[2] E. M. Suijker, M. Sudow, M. Fagerlind, N. Rorsman, A. P. de Hek, and F. E. van Vliet, “GaN MMIC power amplifiers for S -band and X -band,” in 2008 38th European Microwave Conference, 2008, pp. 297–300.
[3] J. Nilsson, N. Billstrom, N. Rorsman, and P. Romanini, “S -band discrete and MMIC GaN power amplifiers,” in 2009 European Mi- crowave Integrated Circuits Conference (EuMIC), 2009, pp. 495– 498.
[4] V. Litovchenko, A. Grygoriev, A. Evtukh, O. Yilmazoglu, H. Hart- nagel, and D. Pavlidis, “Electron field emission from wide band-gap semiconductors (GaN),” in 2009 IEEE International Vacuum Elec- tronics Conference. IEEE, 2009, pp. 271–272.
[5] S. Shukla and J. Kitchen, “GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals,” in 2017 IEEE Topi- cal Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), 2017, pp. 88–91.
[6] G. Torregrosa, J. Grajal, M. Peroni, A. Serino, A. Nanni, and A. Cetronio, “Large-signal modeling of power GaN HEMTs including thermal effects,” in 2007 European Microwave Integrated Circuit Conference, Nov 2007, pp. 36–39.
[7] N. Weerathunge, S. Chakraborty, and M. Heimlich, “A miniaturized Wilkinson power divider for MMIC applications,” in 2021 IEEE Asia-Pacific Microwave Conference (APMC), 2021, pp. 1–3.
[8] M. A. Gonzalez-Garrido, J. Grajal, P. Cubilla, A. Cetronio, C. Lanzieri, and M. Uren, “2-6 GHz GaN MMIC power amplifiers for electronic warfare applications,” in 2008 European Microwave Integrated Circuit Conference, 2008, pp. 83–86.
[9] D.-W. Kim, “An output matching technique for a GaN distributed power amplifier MMIC using tapered drain shunt capacitors,” IEEE Microwave and Wireless Components Letters, vol. 25, no. 9, pp. 603–605, Sep 2015.
[10] S.-H. Li, S. S. Hsu, J. Zhang, and K.-C. Huang, “Design of a com- pact GaN MMIC Doherty power amplifier and system level analysis with X-parameters for 5G communications,” IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 12, pp. 5676–5684, Dec 2018.
[11] A. Seidel, J. Wagner, and F. Ellinger, “3.6 GHz asymmetric Doherty PA MMIC in 250 nm GaN for 5G applications,” in 2020 German Microwave Conference (GeMiC), 2020, pp. 1–4.
[12] S. Jee, J. Lee, J. Son, S. Kim, C. H. Kim, J. Moon, and B. Kim, “Asymmetric broadband Doherty power amplifier using GaN MMIC for femto-cell base-station,” IEEE Transactions on Microwave The- ory and Techniques, vol. 63, no. 9, pp. 2802–2810, 2015.
[13] L.-Y. Chen and J.-S. Fu, “A 3.5-GHz 2-W power amplifier in GaN HEMT technology,” in 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, pp. 1–3. |
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
至系統瀏覽論文 (2025-7-31以後開放)
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit