| 摘要(英) |
The photolithography process is one of the most critical technologies in semiconductor manufacturing technology, the photolithography process mainly includes three steps: coating photoresist, exposure, and development. In recent years, due to the rising awareness of environmental protection and carbon reduction and the cost control of enterprises, reducing the amount of photoresist is becoming one of the emphases of various semiconductor companies and related technology industries. This research is mainly aimed at the spin coating part of the photolithography process. The amount of positive photoresist used in the experiment was reduced, and by improving the adjustment of the experimental parameters of the spin coating process, a better combination of process parameters was sought, and the results of the optimized parameters are verified to meet the current specifications and mass production conditions.
In this experiment, a 12-inch double polished silicon wafer is selected, and the optimization of positive photoresist reduction was the goal. We study the influence to the difference between film thickness mean value, film thickness range value, and the quality of photoresist coverage on the wafer surface during the process of reducing the positive photoresist. The conducted factors used in the spin coating process includes the variation of spin coating module, RRC (Reduced Resist Consumption) pre-wetting speed, spin-up speed and spin-off speed, we also study and analyze the feasibility of mass production. The experimental results show that when the positive photoresist is reduced and the spin-up speed is changed, the film thickness mean value remains unchanged, but the film thickness range value gradually become worse. Furthermore, by conducting the configuration changes of the RRC pre-wetting speed and spin-up speed, the worsening phenomenon of the film thickness range value during the process of positive photoresist reduction has been improved. The study demonstrates the optimization result of the positive photoresist weight reduction, through the optimization of the spin coating process, the original positive photoresist usage can be reduced from 0.9g to 0.6g. Moreover, through the analysis result of the positive photoresist weight reduction spin coating stability and product verification test items, it shows no difference of the stability and test results before and after the positive photoresist reduction. It is expected to reduce the cost of photoresist by about 33.3%.
The results and conclusions obtain in this experimental study are intended to establish a set of fast and effective models and methods to further shorten the time to adjust photoresist coating manufacturing parameter while evaluating different types of photoresist with different viscosity coefficients in the application of the photolithography process. This method can help to target on the manufacturing parameter good for mass production and optimize the overall production efficiency. Moreover, it is expected that this method can be contributed to the semiconductor and related technology industries as a reference in the field of photoresist coating process. |
| 參考文獻 |
[1] M. Quirk and J. Serda, Semiconductor Manufacturing Technology, Prentice Hall,U, USA, 2000.
[2] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice Hall, USA, 2001.
[3] (美) 蕭宏(Hong Xiao) 著，半導體製程技術導論，羅正忠、張鼎張譯，台灣培生教育出版股份有限公司，台北，2002。
[4] CH06-Photolithography Document
取自https://www.academia.edu/30868177/Chapter_6_Photolithography。
[5] TKchap7-1 Document
取自http://homepage.ntu.edu.tw/~nlw001/handouts/semi-TK/TKchap7-1.pdf。
[6] 楊金成、柯富祥和吳政三，「自動化阻劑處理系統介紹」，科儀新知，22卷4期，46~61頁，90年2月。
[7] 龍文安，半導體微影技術，五南圖書出版股份有限公司，台北，2004。
[8] 楊子明、鍾昌貴、沈志彥、李美儀、吳鴻佑和詹家瑋，半導體製程設備技術，五南圖書出版股份有限公司，台北，2014。
[9] M. Hepher, J. Phot. Sci., 12 , 181 , 1964.
[10] N. Saburo, U. Takumi, and I. Toshio, “Microlithography fundamentals in semiconductor devices and fabrication technology”, Marcel Dekker, New York, 65-132 (1998).
[11] L.F. Thompson, C.G. Wilson, and M.J. Bowden, “Introduction to Microlithogaphy”, ACS Symposium Series 219, ACS, Washington, 87 (1983).
[12] Norman S. Allen, J. Photochemistry and photobiology A: Chemistry 100, 101-107,1996.
[13] 柯富祥和蔡輝嘉，「光學微影術中光阻的發展趨勢」，毫微米通訊，5卷3期，42~49頁，1998。
[14] K. Sugimoto, Progress in I-line Photoresist Development, JSR Technical Presentation, May 13 (1998).
[15] K. Sugimoto, Progress in KrF Resist Development, JSR Technical Presentation, May 13 (1998).
[16] R. Allen, Progress in 193 nm Photoresists, Semiconductor International, 73, Sep. (1997).
[17] 陳靖函:產業技術評析半導體用光阻劑之發展概況。2020年8月26 日，取自https://www.moea.gov.tw/MNS/doit/industrytech/IndustryTech.aspx?menu_id=13545&it_id=322。
[18] D. van Steenwinckel et al., J. Vac. Sci. Tech. B, vol. 24, 316-320,2006.
[19] M. Shirai , M. Tsunooka, Prog. Polym. Sci., 21, 1 (1996).
[20] Bornside,D.E.,Macosko, C.W., and Scriven, L.E., “Modeling of Spin Coating”, J. imag. technol.,Vol.13, pp.122-130, August 1987.
[21] T. Yada, M. Aoki, T. Maejima, and A. Ishizu, “Formation of a positive photoresist thin film by spin coating: influence of atmospheric temperature“, Jpn. J. Appl. Phys., vol.36, pp. 372-377, January 1997.
[22] E. J. Watson, “The radial spread of a liquid jet over a horizontal plane”, J.Fluid Mech., Vol.20, pp.481-499, November 1964.
[23] F. Melo, J. F. Joanny, and S. Fauve, “Fingering instability of spinning drops”, Phys. Rev. Lett., Vol. 63, pp. 1958-1961, October 1989.
[24] M Kulkarni, S Sahoo, P Doshi and AV Orpe, Kulkarni, “Fingering instability of a suspension film spreading on a spinning disk ”, Phys. Rev. Lett., 63(18) , 1958.
[25] 周復初、卓浩江和王明文，「轉速對旋轉塗佈液膜穩定的影響」，中國工程師學會第十六屆全國學術研討會，1999。
[26] 卓浩江，「轉速對旋轉塗佈液膜穩定的影響」，國立中央大學，碩士論文，1998.
[27] 余宣魁，「預塗表面對旋轉塗佈的影響」，國立中央大學，碩士論文，1999.
[28] ASML，取自https://www.asml.com/en/products/duv-lithography-systems。
[29] TEL，取自 https://www.tel.com/product/lithius.html#product5350。
[30] Hitachi，取自 https://www.hitachi-hightech.com/tw/products/device/index.html。
[31] FEI，取自 https://www.fei.com/home/#gsc.tab=0。
[32] TEL, “TEL Clean Track LITHIUS Basic Operations Manual”, Document No.5797-101003-25, 2016.
[33] ViBRA 新光電子株式，取自 https://www.vibra.co.jp/。
[34] TEL, “TEL Clean Track LITHIUS Operations Manual”, Document No.5797-100008-27, 2018.
[35] TEL, “TEL Clean Track LITHIUS Maintenance Manual”, Document No.5797-201906-23, 2022. |
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