| 摘要(英) |
The fluid flow and mass transfer phenomenon in the acid etching cleaning tank are very important, and the etching uniformity of the wafer surface will be affected by these two factors. The flatness of the wafer surface after etching and cleaning will then affect the subsequent semiconductor process and the final production yield. Therefore, in order to understand the phenomenon in the acid etching cleaning tank, a numerical model is established for this purpose, so as to conduct in-depth discussions and clarify the system.
In this study, a mathematical model was established based on the mechanism of acid etching and the characteristics of the two-phase flow in the cleaning tank. Numerical simulation is carried out under the same operating conditions as the experiment, and the validity of the simulation is verified by comparing with the experimental data. Then, the flow state in the cleaning tank and the form of reaction of the etchant delivered to the wafer surface are discussed. Then, by changing the parameters such as flow rate, wafer rotation speed, and number of roller input by the model, we can understand how the wafer flatness changes under different boundary conditions. We found that the flow rate and the rotational speed will affect the wafer flatness in different trends. A larger inlet flow rate will greatly increase the etching rate of the wafer edge. A higher wafer rotational speed will increase the overall etching rate. The roller that supports and drives the wafer to rotate is the main factor affecting the poor flatness of the wafer edge caused by the etching wafer. |
| 參考文獻 |
參考文獻
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