參考文獻 |
[1] L. F. Alves, R. C. Gomes, P. Lefranc, R. d. A. Pegado, P.-O. Jeannin, B. A. Luciano, and F. V. Rocha, "SIC power devices in power electronics: An overview." 2017 Brazilian Power Electronics Conference (COBEP). IEEE, 2017.
[2] W. Afzal, A. Afaq, S. U. Rehman, and W. Rowe, "Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects." 2021 Photonics & Electromagnetics Research Symposium (PIERS). IEEE, 2021.
[3] F. Roccaforte, G. Greco, P. Fiorenza, and F. Iucolano, “An overview of normally-off GaN-based high electron mobility transistors,” Materials, vol. 12, no. 10, pp. 1599, 2019.
[4] O. Ambacher, B. Foutz, J. Smart, J. Shealy, N. Weimann, K. Chu, M. Murphy, A. Sierakowski, W. Schaff, and L. Eastman, “Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” Journal of applied physics, vol. 87, no. 1, pp. 334-344, 2000.
[5] S. Sharbati, I. Gharibshahian, T. Ebel, A. A. Orouji, and W.-T. Franke, “Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors,” Journal of Electronic Materials, vol. 50, no. 7, pp. 3923-3929, 2021.
[6] G. Zhou, Z. Wan, G. Yang, Y. Jiang, R. Sokolovskij, H. Yu, and G. Xia, “Gate leakage suppression and breakdown voltage enhancement in p-GaN HEMTs using metal/graphene gates,” IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 875-880, 2020.
[7] R. Gong, J. Wang, S. Liu, Z. Dong, M. Yu, C. P. Wen, Y. Cai, and B. Zhang, “Analysis of surface roughness in Ti/Al/Ni/Au ohmic contact to AlGaN/GaN high electron mobility transistors,” Applied Physics Letters, vol. 97, no. 6, pp. 062115, 2010.
[8] X. Kong, K. Wei, G. Liu, J. Wang, and X. Liu, "Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs."The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology. IEEE, 2012.
[9] H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, “Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4, pp. 1844-1855, 2003.
[10] R. Wang, G. Li, J. Guo, B. Song, J. Verma, Z. Hu, Y. Yue, K. Nomoto, S. Ganguly, and S. Rouvimov, "Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation." 2013 IEEE International Electron Devices Meeting. IEEE, 2013.
[11] Y. Lu, X. Ma, L. Yang, B. Hou, M. Mi, M. Zhang, J. Zheng, H. Zhang, and Y. Hao, “High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology,” IEEE Electron Device Letters, vol. 39, no. 6, pp. 811-814, 2018.
[12] X.-R. You, C.-W. Chen, J. Tzou, and Y.-M. Hsin, “Study of Au-Based and Au-Free Ohmic Contacts in AlGaN/GaN HEMTs by Recessed Patterns,” ECS Journal of Solid State Science and Technology, vol. 10, no. 7, pp. 075006, 2021.
[13] S. J. Kim, T. Y. Nam, and T. G. Kim, “Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via O2 Plasma Treatment,” IEEE Electron Device Letters, vol. 32, no. 2, pp. 149-151, 2010.
[14] K.-E. Byun, S. Park, H. Yang, H.-J. Chung, H. J. Song, J. Lee, D. H. Seo, J. Heo, D. Lee, and H. J. Shin, "Graphene for metal-semiconductor Ohmic contacts." 2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012). IEEE, 2012.
[15] M. Batmunkh, M. Bat‐Erdene, and J. G. Shapter, “Phosphorene and phosphorene‐based materials–prospects for future applications,” Advanced Materials, vol. 28, no. 39, pp. 8586-8617, 2016.
[16] H. Zhong, Z. Liu, L. Shi, G. Xu, Y. Fan, Z. Huang, J. Wang, G. Ren, and K. Xu, “Graphene in ohmic contact for both n-GaN and p-GaN,” Applied Physics Letters, vol. 104, no. 21, pp. 212101, 2014.
[17] J. Wang, C. Zheng, J. Ning, L. Zhang, W. Li, Z. Ni, Y. Chen, J. Wang, and S. Xu, “Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure,” Scientific Reports, vol. 5, no. 1, pp. 1-6, 2015.
[18] M. F. Romero, A. Boscá, J. Pedrós, J. Martínez, R. Fandan, T. Palacios, and F. Calle, “Impact of 2D-graphene on SiN passivated AlGaN/GaN MIS-HEMTs under mist exposure,” IEEE Electron Device Letters, vol. 38, no. 10, pp. 1441-1444, 2017.
[19] J. Kim, S. K. Baek, K. S. Kim, Y. J. Chang, and E. Choi, “Long-term stability study of graphene-passivated black phosphorus under air exposure,” Current Applied Physics, vol. 16, no. 2, pp. 165-169, 2016.
[20] R. M. Jacobberger, M. J. Dodd, M. Zamiri, A. J. Way, M. S. Arnold, and M. G. Lagally, “Passivation of germanium by graphene for stable graphene/germanium heterostructure devices,” ACS Applied Nano Materials, vol. 2, no. 7, pp. 4313-4322, 2019.
[21] W. A. De Heer, C. Berger, X. Wu, P. N. First, E. H. Conrad, X. Li, T. Li, M. Sprinkle, J. Hass, and M. L. Sadowski, “Epitaxial graphene,” Solid State Communications, vol. 143, no. 1-2, pp. 92-100, 2007.
[22] C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, and A. N. Marchenkov, “Electronic confinement and coherence in patterned epitaxial graphene,” Science, vol. 312, no. 5777, pp. 1191-1196, 2006.
[23] K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, and B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” nature, vol. 457, no. 7230, pp. 706-710, 2009.
[24] A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, “Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition,” Nano letters, vol. 9, no. 1, pp. 30-35, 2009.
[25] X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, and E. Tutuc, “Large-area synthesis of high-quality and uniform graphene films on copper foils,” science, vol. 324, no. 5932, pp. 1312-1314, 2009.
[26] C. J. Shearer, A. D. Slattery, A. J. Stapleton, J. G. Shapter, and C. T. Gibson, “Accurate thickness measurement of graphene,” Nanotechnology, vol. 27, no. 12, pp. 125704, 2016.
[27] X. Ling, J. Wu, L. Xie, and J. Zhang, “Graphene-thickness-dependent graphene-enhanced Raman scattering,” The Journal of Physical Chemistry C, vol. 117, no. 5, pp. 2369-2376, 2013.
[28] Z. Ni, Y. Wang, T. Yu, and Z. Shen, “Raman spectroscopy and imaging of graphene,” Nano Research, vol. 1, no. 4, pp. 273-291, 2008.
[29] X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, “Transfer of large-area graphene films for high-performance transparent conductive electrodes,” Nano letters, vol. 9, no. 12, pp. 4359-4363, 2009.
[30] N. Hong, D. Kireev, Q. Zhao, D. Chen, D. Akinwande, and W. Li, “Roll‐to‐Roll Dry Transfer of Large‐Scale Graphene,” Advanced Materials, vol. 34, no. 3, pp. 2106615, 2022.
[31] J. W. Suk, A. Kitt, C. W. Magnuson, Y. Hao, S. Ahmed, J. An, A. K. Swan, B. B. Goldberg, and R. S. Ruoff, “Transfer of CVD-grown monolayer graphene onto arbitrary substrates,” ACS nano, vol. 5, no. 9, pp. 6916-6924, 2011.
[32] L. Malard, M. A. Pimenta, G. Dresselhaus, and M. Dresselhaus, “Raman spectroscopy in graphene,” Physics reports, vol. 473, no. 5-6, pp. 51-87, 2009.
[33] B. Pandit, T. H. Seo, B. D. Ryu, and J. Cho, “Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions,” AIP Advances, vol. 6, no. 6, pp. 065007, 2016.
[34] J. Luo, S.-L. Zhao, M.-H. Mi, W.-W. Chen, B. Hou, J.-C. Zhang, X.-H. Ma, and Y. Hao, “Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor,” Chinese Physics B, vol. 25, no. 2, pp. 027303, 2015.
[35] S. Dröscher, P. Roulleau, F. Molitor, P. Studerus, C. Stampfer, K. Ensslin, and T. Ihn, “Quantum capacitance and density of states of graphene,” Applied physics letters, vol. 96, no. 15, pp. 152104, 2010.
[36] M. Karbalaei, D. Dideban, and H. Heidari, “Improvement in electrical characteristics of Silicon on Insulator (SOI) transistor using graphene material,” Results in Physics, vol. 15, pp. 102806, 2019.
[37] K. Nagashio, and A. Toriumi, “Density-of-states limited contact resistance in graphene field-effect transistors,” Japanese Journal of Applied Physics, vol. 50, no. 7R, pp. 070108, 2011.
[38] M. Sang, J. Shin, K. Kim, and K. J. Yu, “Electronic and thermal properties of graphene and recent advances in graphene based electronics applications,” Nanomaterials, vol. 9, no. 3, pp. 374, 2019.
[39] R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. A. Richter, A. R. Hight-Walker, X. Liang, A. Seabaugh, and D. Jena, “Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy,” Applied Physics Letters, vol. 101, no. 2, pp. 022105, 2012.
[40] "ATLAS User′s Manual," www.silvaco.com.
[41] S. Iwakami, O. Machida, M. Yanagihara, T. Ehara, N. Kaneko, H. Goto, and A. Iwabuchi, “20 mΩ, 750 V high-power AlGaN/GaN heterostructure field-effect transistors on Si substrate,” Japanese journal of applied physics, vol. 46, no. 6L, pp. L587, 2007.
[42] Y. Dora, A. Chakraborty, L. Mccarthy, S. Keller, S. DenBaars, and U. Mishra, “High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates,” IEEE Electron Device Letters, vol. 27, no. 9, pp. 713-715, 2006.
[43] S. L. Selvaraj, A. Watanabe, A. Wakejima, and T. Egawa, “1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate,” IEEE electron device letters, vol. 33, no. 10, pp. 1375-1377, 2012.
[44] M. Hua, J. Wei, G. Tang, Z. Zhang, Q. Qian, X. Cai, N. Wang, and K. J. Chen, “Normally-off LPCVD-SiN x/GaN MIS-FET with crystalline oxidation interlayer,” IEEE Electron Device Letters, vol. 38, no. 7, pp. 929-932, 2017.
[45] T.-E. Hsieh, E. Y. Chang, Y.-Z. Song, Y.-C. Lin, H.-C. Wang, S.-C. Liu, S. Salahuddin, and C. C. Hu, “Gate recessed quasi-normally OFF Al 2 O 3/AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer,” IEEE Electron Device Letters, vol. 35, no. 7, pp. 732-734, 2014.
[46] H. Wang, J. Wang, J. Liu, M. Li, Y. He, M. Wang, M. Yu, W. Wu, Y. Zhou, and G. Dai, “Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics,” Applied Physics Express, vol. 10, no. 10, pp. 106502, 2017.
[47] N. Ikeda, R. Tamura, T. Kokawa, H. Kambayashi, Y. Sato, T. Nomura, and S. Kato, "Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate." 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs. IEEE, 2011.
[48] M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime." 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016.
[49] Y. Kumazaki, S. Ozaki, N. Okamoto, N. Hara, and T. Ohki, “Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs,” IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3073-3078, 2022.
[50] B. Song, M. Zhu, Z. Hu, M. Qi, K. Nomoto, X. Yan, Y. Cao, D. Jena, and H. G. Xing, “Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts,” IEEE electron Device letters, vol. 37, no. 1, pp. 16-19, 2015.
[51] H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, and U. Mishra, “Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts,” IEEE Electron Device Letters, vol. 26, no. 5, pp. 283-285, 2005.
[52] F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J. Speck, and U. Mishra, “Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature,” IEEE electron device letters, vol. 27, no. 4, pp. 205-207, 2006.
[53] T. Nanjo, T. Motoya, A. Imai, Y. Suzuki, K. Shiozawa, M. Suita, T. Oishi, Y. Abe, E. Yagyu, and K. Yoshiara, “Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-Ion-implanted source/drain contacts,” Japanese Journal of Applied Physics, vol. 50, no. 6R, pp. 064101, 2011.
[54] K. Han, “Employing hole-array recess of barrier layer of AlGaN/GaN heterostructures to reduce annealing temperature of ohmic contact,” Semiconductor Science and Technology, vol. 32, no. 10, pp. 105010, 2017.
[55] B. Benakaprasad, A. M. Eblabla, X. Li, K. G. Crawford, and K. Elgaid, “Optimization of ohmic contact for AlGaN/GaN HEMT on low-resistivity silicon,” IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 863-868, 2020. |