可撓曲銀/彎曲轉折型矽晶奈米線異質結構之製備及其室溫氣體感測特性研究

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姓名

林平洲(Ping-Chou Lin) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

可撓曲銀/彎曲轉折型矽晶奈米線異質結構之製備及其室溫氣體感測特性研究

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摘要(中)

在本研究中，我們透過多步驟貴金屬輔助化學蝕刻法，藉由調控蝕刻溶液的組成比例，以及改變在不同溶液中的浸泡時間，成功的在P-type(001)以及N-type(001)晶面之矽單晶基材上製備出高深寬比以及大面積準直排列之彎曲轉折型矽晶奈米線結構。氣體偵測性能則是透過丙酮、氧氣來驗證不同類型之矽晶氣體感測元件對於氧化性以及還原性氣體之電性趨勢變化以及其作用機制。此外，本研究為提升氣體感測元件之偵測能力，進一步導入酸性橫向蝕刻製程技術，製備出多孔隙彎曲轉折型矽晶奈米線結構，以提高偵測元件之比表面積；並在最佳條件之多孔隙彎曲轉折型矽晶奈米線結構上利用無電鍍銀法披覆銀奈米粒子，藉此來改善氣體偵測性能。銀/多孔隙彎曲轉折型矽單晶奈米線氣體感測元件，和一般常見之一維矽晶奈米結構之氣體感測元件相比，在定電壓下之偵測靈敏度有顯著的提升。
本研究使用一步驟金屬輔助化學蝕刻法，製備出厚度均勻之超薄可撓曲矽單晶基材，再將此基材和前述所開發出之銀/多孔隙彎曲轉折型矽晶奈米線結構進行結合，成功製備出可撓曲銀/多孔隙彎曲轉折型矽晶奈米線氣體感測元件。此元件展現出十分良好之彎曲能力，可分別於曲率半徑為2.5 cm、1.5 cm操作情況下進行氣體偵測。
最後，本研究針對大多數氣體感測元件中常見之恢復時間過長問題提出改善方式，利用金屬輔助化學蝕刻法結合鹼性蝕刻法，在可撓曲基材上，製備矽晶通道結構，並與上述製備之可撓曲銀/多孔隙彎曲轉折型矽晶奈米線結構結合，製備出可撓曲銀/多孔隙彎曲轉折型矽晶奈米線/矽晶通道異質結構氣體感測元件，藉由矽晶通道所提供之額外氣體脫附路徑，來縮短元件之恢復時間，以達到優化元件性能之目的。

摘要(英)

In this study, the large-area, vertically-aligned single crystalline kinked silicon nanowires array(KSiNWs) was successfully fabricated on P-type(001) and N-type(001) substrate by a multiple steps noble metal assisted chemical etching(MACE)。The gas-sensing performance was evaluated by acetone and oxygen to investigate the detecting trend and mechanism. In order to increase the surface area to volume ratio, we used lateral etching technique to fabricate porous kinked silicon nanowire. In addition, so as to improve the gas-sensing performance, this study developed a electroless Ag deposition process which could uniformly decorate Ag nanoparticles on the porous KSiNWs. The Ag/Porous KSiNWs exhibited better gas–sensing performance than normally Si-based 1D nanostructure gas sensor.
The one step noble metal assisted chemical etching method was used to prepare uniform ultra-thin Si substrate. Then, using the process we just mentioned above to fabricate Ag/Porous KSiNWs on ultra-thin Si substrate. The gas-sensing detection could be performed when the radius of curvature was 2.5 cm and 1.5 cm respectively.
Finally, this study proposed a way to improve the long recovery time issues which was usually encounter in most of gas sensing devices. We used noble metal-assisted chemical etching to fabricate micro-nanoscale hole structures on flexible Si substrates. Then, using the process we mentioned above to fabricate Ag/Porous KSiNWs on the front side of ultra-thin Si substrate. This structure provided additional path for gas desorption. Therefore, we look forward to shorten recovery time and optimizing the performance of the gas-sensing device.

關鍵字(中)

★ 彎曲轉折型矽晶奈米線
★ 氣體感測器

關鍵字(英)

★ Kinked Silicon Nanowires
★ Gas Sensor

論文目次

第一章前言及文獻回顧 1
1-1前言 1
1-2氣體感測元件 2
1-2-1金屬氧化物半導體氣體感測元件反應機制 4
1-2-2矽晶材料之氣體感測元件反應機制 5
1-2-3金屬奈米粒子披覆技術及其增強氣體感測性能之機制 7
1-3一維半導體奈米材料 9
1-3-1矽晶奈米線之製備方式 10
1-4彎曲轉折型矽晶奈米線 13
1-4-1彎曲轉折型矽晶奈米線之製備方式 14
1-4-2彎曲轉折型矽晶奈米線之應用 15
1-5超薄可撓曲矽晶元件 15
1-5-1超薄可撓曲矽晶元件之製程技術 16
1-5-2超薄可撓曲矽晶元件之應用領域 17
1-6研究動機及目標 18
第二章實驗步驟及儀器設備 21
2-1實驗步驟 21
2-1-1矽單晶基材使用前處理 21
2-1-2一步驟金屬輔助化學蝕刻法製備超薄可撓曲矽單晶基材 22
2-1-3多步驟金屬輔助化學蝕刻法製備彎曲轉折型矽晶奈米線 22
2-1-4酸性橫向蝕刻法製備多孔隙彎曲轉折型矽晶奈米線 22
2-1-5無電鍍銀粒子披覆多孔隙彎曲轉折型矽晶奈米線 23
2-1-6兩步驟金屬輔助化學蝕刻結合鹼性蝕刻法製備矽晶通道結構 23
2-1-7可撓曲銀/彎曲轉折型多孔隙矽晶奈米線/矽晶通道異質結構之製備 23
2-1-8氣體感測元件之製備 24
2-1-9各式氧化製程測試元件氣體偵測性能差異 24
2-1-9-1原生氧化層(native oxide) 24
2-1-9-2氧氣電漿氧化層(plasma oxide) 25
2-2試片分析 25
2-2-1掃描式電子顯微鏡 25
2-2-2穿透式電子顯微鏡 26
2-2-3氣體感測系統 26
第三章結果與討論 27
3-1製備彎曲轉折型矽晶奈米線結構 27
3-1-1彎曲轉折型矽晶奈米線結構製備 27
3-1-2多孔隙彎曲轉折型矽晶奈米線結構製備 31
3-1-3無電鍍銀披覆多孔隙彎曲轉折型矽晶奈米線結構製備 32
3-2 P型及N型彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測性質分析 32
3-2-1彎曲轉折型矽晶奈米線氣體感測元件之設計 33
3-2-2不同氧化製程技術製備P型彎曲轉折型矽晶奈米線氣體感測元件及其氣體偵測性質分析 33
3-2-3 N型彎曲轉折型矽晶奈米線氣體感測元件之偵測性質分析 35
3-2-4 P型及N型彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測機制 36
3-3 彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測性能分析 37
3-3-1彎曲轉折型矽晶奈米線與矽晶奈米線氣體感測元件之氣體偵測性能分析 37
3-3-2 P型多孔隙彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測性能分析 37
3-3-3 P型銀/多孔隙彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測性能分析及其增益機制 38
3-4 P型超薄可撓曲矽單晶基材上製備彎曲轉折型矽晶奈米線結構及其氣體偵測性能分析 39
3-4-1 P型超薄可撓曲矽晶基材之製備 40
3-4-2 不同曲率半徑下P型可撓曲彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測性能分析 40
3-4-3 不同曲率半徑下P型可撓曲銀/彎曲轉折型矽晶奈米線氣體感測元件之氣體偵測性能分析 42
3-5 P型可撓曲銀/多孔隙彎曲轉折型矽晶奈米線/矽晶通道異質結構之製備及其氣體偵測性能分析 43
3-5-1金屬輔助化學蝕刻結合鹼性蝕刻法製備矽晶通道結構 44
3-5-2製備可撓曲銀/多孔隙彎曲轉折型矽晶奈米線/矽晶通道異質結構及其氣體偵測性能分析 45
第四章結論與未來展望 49
4-1 結論 49
4-2 未來展望 50
參考文獻 51
表目錄 59
圖目錄 61

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指導教授

鄭紹良(Shao-Liang Cheng)

審核日期

2023-8-15

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