| 摘要(英) |
Using chemical vapor deposition method for epitaxy, forming a thin film on the surface of the wafer is already an important process in the semiconductor industry, and the flatness of the epitaxy is the most important thing in the process. Because of the reaction chamber for the process is too large and complex, it is necessary to improve by simulating and analyzing its thermal field, flow field, concentration transfer, etc., to make the flatness better and better.
In the experiment, due to the limitation of the thermal radiation system, no matter how to adjust the heat power ratio of the bulbs at each position, the surface of the wafer cannot have a uniform temperature. Therefore, the growth rate of the silicon film will be affected by the temperature, and the growth rate will be less uniform at some positions. So we changing the flow field of the non-uniform part to change the deposition rate more uniformity.
In this study, the inlet flow rate is controlled by five regions, so as to control the inlet flow velocity distribution to control the change of the flow field, and then simulate and observe the change of the epitaxial film deposition rate and the concentration change in the chamber . Among them, due to the change of the flow rate, the requirements for the mesh will be extremely large. At the same time, because the wafer and the susceptor are in a rotating state in the chamber, flow field is influenced by rotation a lot. When entrance flow rate change, the influence range of each entrance would effect by rotation. The rotation effect should be the following study. |
| 參考文獻 |
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