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姓名	王聖翔(Sheng-Hsiang Wang)  查詢紙本館藏	畢業系所	光機電工程研究所
論文名稱	應用電洞加速層低電流密度下增益Micro-LED之內部量子效率 (Improvement of the internal quantum efficiency of III-Nitride blue Micro-LEDs by the hole accelerator at low current density)
相關論文	★ 利用銦錫氧化物設計太陽能電池之電極對轉換效率之效益 ★ Modified Hartmann mask於氣體折射率 量測之應用 ★ 側聚光型太陽能電池系統之聚光元件設計與製作 ★ 結合繞射光柵與平凸透鏡之光束分頻元件於聚 光型太陽光電 / 太陽熱混合系統之應用 ★ 波前檢測應用於氣體折射率量測 ★ 多重曲率之聚光元件應用於聚光型太陽能電池系統 ★ 太陽光模擬系統之設計與製作 ★ 有機發光二極體熱特性模擬研究 ★ 有機發光二極體激子光電特性模擬研究 ★ 太陽光與固態照明自動化混光技術研究 ★ 高分子光柵應用於太陽光分光元件 ★ 利用色差分光之太陽能分光系統 ★ 有機發光二極體光熱電特性整合模擬之研究 ★ 隨機奈米粒子模型應用於OLED 出光增益之研究 ★ 太陽選擇性塗層與熱平行堆疊運用於太陽熱電發電系統之實時模擬研究 ★ 陰影疊紋式力-位移量測技術之研究
檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 (2025-7-15以後開放)
摘要(中)	隨著微型發光二極體尺寸的減小，磊晶過程中產生之缺陷變得更加嚴重。這些缺陷導致載流子產生表面復合，導致載子無法復合於主動層。為了增強電洞注入效果，此研究加入了各種電洞加速層(Hole Accelerator)，此層提供額外動能使電洞穿過 p型電子阻擋層 (p-EBL)，使更多電洞進入多重量子井(Multiple Quantum Wells )與電子復合，從而使微發光二極體之內部量子效率提升。本研究使用COMSOL商業多重物理量模擬軟體之半導體模組來模擬元件之特性。通過增添電洞加速層，藉由材料於異質接面造成之極化電場，使元件內電洞速度提升，防止它們被困在缺陷能級中。此外，研究不同量子壁壘（Quantum barrier）之材料以提高低電流密度下微發光二極體之內部量子效率。
摘要(英)	As the size of micro light-emitting diodes (μ-LEDs) decreases, the defects generated during the epitaxial growth process become more severe. These defects lead to surface recombination of charge carriers, preventing their recombination within the active layer. In order to enhance hole injection efficiency, this study introduces various hole accelerators, which provide additional kinetic energy to the holes to traverse the p-type Electron Blocking Layer (p-EBL). This enables more holes to enter the Multiple Quantum Wells (MQWs) and recombine with electrons, thereby improving the internal quantum efficiency of the μ-LEDs. The commercial multiphysics simulation software COMSOL′s semiconductor module is utilized to simulate the characteristics of the device. By incorporating hole accelerators, the polarization electric field induced at the heterojunction enhances the hole velocity within the device, preventing them from being trapped in defect energy levels. Additionally, different materials for the quantum barriers are studied to improve the internal quantum efficiency of the micro-LED at low current densities.
關鍵字(中)	★ 微發光二極體 ★ 電洞加速層 ★ 量子壁壘材料 ★ 提升內部量子效率	關鍵字(英)	★ μ-LEDs ★ hole accelerator ★ Quantum barrier material ★ Improve quantum efficiency
論文目次	摘要 i Abstract ii 致謝 iii 目錄 v 圖目錄 viii 表目錄 xi 第一章、緒論 1 1-1 前言 1 1-2 文獻探討 4 1-3 研究動機 13 1-4 論文研究架構 14 第二章、基礎理論與原理 15 2-1 能帶結構 15 2-1-1 能階與能帶 16 2-1-2 狀態密度函數 19 2-2 載子濃度計算 20 2-3 發光二極體 22 2-3-1 發光二極體材料 22 2-3-2 發光二極體發光原理 23 2-3-3 發光二極體復合方式 24 2-3-4 發光二極體量子效率 27 2-4 電洞加速層 29 2-5 小結 30 第三章、模擬設計與架構 31 3-1 Micro-LED半導體模擬研究方法 31 3-2 Micro-LED 模擬模型介紹及材料說明 32 3-3 邊界條件設定 40 3-4 半導體模擬主導公式 42 3-5 小結 44 第四章、模擬結果與討論 45 4-1 半導體模型驗證 45 4-2 電洞加速層於微發光二極體 46 4-3 低電流密度下提升內部量子效率 57 4-4 小節 62 第五章、結論與未來展望 63 5-1 結論 63 5-2 未來展望 64 6 參考文獻 65
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指導教授	韋安琪(An-Chi Wei)	審核日期	2023-7-20
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