矽基二硫化鉬薄膜之製程與特性研究

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姓名

邱聖儒(Sheng-Ru Chiu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

矽基二硫化鉬薄膜之製程與特性研究
(Research on the Fabrication Process and Properties of Silicon-based Molybdenum Disulfide Thin Film)

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至系統瀏覽論文 (2028-8-1以後開放)

摘要(中)

二維材料二硫化鉬（MoS2）因其獨特的結構和特性，在下一代半導體材料中引起了廣泛的關注。本研究旨在開發一種直接在矽基SiO2薄膜生長二維MoS2薄膜的方法，減少轉印所造成的完整性，對準及雜質的影響，簡化製程的程序，並探索其作為半導體材料的潛力。
本研究使用低壓化學氣相沉積法(LPCVD)方式，於SiO2薄膜上直接生長MoS2薄膜，而SiO2用氧電漿預先處理，除了能有效去除SiO2表面的污染物，如塵埃、有機殘留物、水分等，還可以活化SiO2表面，增加其表面能，提高表面的反應性。這可以改善SiO2與其他材料之間的黏附力和界面特性，對於塗覆、薄膜沉積、電子束蒸鍍等工藝具有重要影響，有助於後續生長MoS2薄膜。
而生長出的樣品所量測到拉曼位移之△k為21cm-1以下的單層結構，PL量測得出MoS2為直接能隙的特性，AFM量測為0.712nm的單層厚度，HR-TEM量測層間距為0.638nm。
該研究證明出以氧電漿處理過後的基板所生長的MoS2薄膜，可達到與在Sapphire上生長及轉印到SiO2基板上的MoS2薄膜有相同品質、均勻性良好及單層結構的結果，未來可以更廣泛的應用於電子及光電元件。

摘要(英)

The two-dimensional 2D material molybdenum disulfide (MoS2) has attracted much attention as a next-generation semiconductor material due to its unique structure and properties. The aim of this study is to deposit two-dimensional MoS2 films directly on Si-based SiO2 films by simplify the process procedures to reduce the effects of influences, alignment and defects caused by transfer printing, and to explore its potential as the next-generation semiconductor material.
In this study, MoS2 films were grown directly on SiO2 films using low pressure chemical vapor deposition (LPCVD). The SiO2 films were pretreated with oxygen plasma to remove contaminants on the SiO2 surface, such as dust, organic residues, and moisture, etc. And activate the SiO2 surface, increase its surface energy, and improve the reactivity of the surface can be improved. The adhesion and interfacial properties between SiO2 and 2D materials to improve the growth of MoS2 films.
The Raman shift Δk of the MoS2 samples were 21 cm-1 or less to be confirmed as the monolayer structure. The PL measurement showed that the MoS2 films were direct energy gap. The thickness of the MoS2 monolayer was 0.712 nm measured by AFM. The spacing between the layers was measured to be 0.638 nm measured by HR-TEM.
This study demonstrated that MoS2 films grown on oxygen plasma-treated substrates can achieve the same quality, good uniformity, and monolayer structure as MoS2 films grown on Sapphire. The results show the MoS2 films can be used for a wider range of electronic and optoelectronic applications in the future.

關鍵字(中)

★ 二硫化鉬

關鍵字(英)

★ Molybdenum Disulfide

論文目次

摘要 vi
Abstract vii
誌謝 viii
目錄 ix
圖目錄 xii
第一章、緒論 1
1-1 前言 1
1-2 研究動機與目的 2
1-3 研究目的與方法 3
2 第二章、基礎理論及文獻回顧 6
2-1 二硫化鉬的特性 6
2-1-1 二硫化鉬的晶體結構 6
2-1-2 二硫化鉬的光學特性 10
2-2 文獻回顧 11
2-2-1 二硫化鉬的製備方式 11
3 第三章、實驗架構與分析儀器介紹 19
3-1 實驗方法 19
3-1-1 氧電漿表面前處理(Oxygen Plasma Surface Treatment) 19
3-1-2 低壓化學氣相沉積法(Low Pressure Chemical Vapor Deposition, LPCVD) 20
3-1-3 實驗流程 21
3-1-4 二硫化鉬薄膜轉印製程流程 23
3-2 分析儀器 24
3-2-1 拉曼光譜儀(Raman Spectrometer) 24
3-2-2 光致發光光譜儀(Photoluminescence Spectrometer, PL) 26
3-2-3 光學顯微鏡(Optical Microscope, OM) 26
3-2-4 接觸角量測儀(Contact Angle, CA ) 27
3-2-5 高解析度穿透式電子顯微鏡(High Resolution-Transmission Electron Microscope, HR-TEM) 28
3-2-6 X射線光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS) 29
3-2-7 原子力顯微鏡(Atomic Force Microscope, AFM) 30
4 第四章、實驗結果 31
4-1 不同基板擺放方式生長之二硫化鉬之分析 31
4-1-1 基板以倒蓋方式生長二硫化鉬之分析 31
4-1-2 基板以平放方式生長二硫化鉬之分析 33
4-2 有無基板前處理生長之二硫化鉬薄膜之分析 35
4-2-1 於700℃生長二硫化鉬薄膜有無前處理之分析 35
4-2-2 調變基板前處理時間之分析 37
4-3 調變生長溫度與硫化時間點之分析 39
4-3-1 調變生長溫度之分析 39
4-3-2 於650℃生長並調變硫化時間點之分析 41
4-3-3 於700℃生長並調變硫化時間點之分析 43
4-3-4 於750℃生長並調變硫化時間點之分析 44
4-4調變前驅物重量之二硫化鉬薄膜之分析 46
4-4-1調變三氧化鉬重量之分析 46
4-4-2調變硫粉重量之分析 48
4-5轉印及直接生長二硫化鉬薄膜元素及表面之分析 50
4-5-1以氯化鈉生長並轉印二硫化鉬薄膜元素與表面之分析 50
4-5-2直接於SiO2基板生長二硫化鉬薄膜元素與表面之分析 53
5 第五章、結論與未來展望 57
5-1 實驗結論 57
5-2 未來展望 58
參考文獻 59

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指導教授

陳昇暉

審核日期

2023-8-1

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