電荷阻擋層對有機光偵測器性能之影響

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姓名

張庭愷(Ting-Kai Chang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

電荷阻擋層對有機光偵測器性能之影響
(The impact of charge blocking layers on the performance of organic photodetectors)

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至系統瀏覽論文 (2028-8-15以後開放)

摘要(中)

有機光偵測器在光電轉換應用中雖然具有無窮潛力，但是目前大多數有機光電偵測器因為考量激子的拆解效率而使用本體異質結面 (bulk heterojunction)結構作為吸光主動層，但會導致較高的暗電流，而光偵測器的暗電流會影響元件之性能。因此，本研究引入阻擋層的概念，目的在於提升有機光偵測器的性能，實現低暗電流和高光電流的元件設計。實驗選用Poly(3-hexylthiophene)(P3HT)及[6,6]-phenyl-C61-butyric acid methyl ester(PCBM)作為元件的主動層，並研究使用五種不同的阻擋層，並對結果進行分析和討論。
首先，研究加入絕緣材料HfO2，結果證實有機光偵測器能夠達到降低暗電流效果，但無法提升光電流。接下來研究以氧化鋅前驅物生長之氧化鋅薄膜（Zinc oxide，ZnO）做為阻擋層，實驗結果發現薄膜厚度不同會導致元件性能有明顯差異。進一步利用市售功函數(Work function)4.3 eV和3.9 eV的ZnO墨水旋塗成膜作為阻擋層，發現加入高功函數的ZnO能有效抑制光偵測器的暗電流。而加入低功函數的ZnO則大幅增加暗電流和光電流。透過不同功函數的元件差異也展現ZnO功函數會影響元件的性能表現。最後，將兩種功函數ZnO墨水以適當比例混和，成功使有機光電偵測器能同時降低暗電流並提高光電流。在-1 V偏壓下，該元件的響應度達到0.62 A/W，偵測度為 1.84×10^12 Jones，外部量子效率為146.9 %，上升時間為16.5 µs和下降時間為106.5 µs。

摘要(英)

Organic photodetectors hold immense potential for convert light energy into electrical energy applications. However, most organic photodetectors use bulk heterojunction structures as their photoactive layers to increase exciton dissociation efficiency, but this can result in a high dark current, consequently impacting the device′s performance. To address this issue, this study introduces the concept of charge-blocking layers to enhance the performance of organic photodetectors, aiming to achieve low dark current and high photocurrent in the device design. The experiments employed Poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the active layer materials and analyzed the results using five different blocking layers.
Firstly, the addition of the insulating material hafnium oxide (HfO2) confirmed the expected reduction in the dark current due to charge blocking effect, but the photocurrent was not increased. Subsequently, the zinc oxide (ZnO) blocking layer prepared by the precursor was investigated, revealing that different ZnO thicknesses would result in significant variations in device performances. Additionally, the commercially available ZnO inks with work functions of 4.3 eV and 3.9 eV were used as the blocking layers. It was found that the higher work function ZnO effectively suppressed the dark current of the photodetector. In contrast, adding lower work function ZnO led to a substantial increase in both dark and photocurrents. The differences observed in the devices with different work functions also indicate that the work function of ZnO affects the performance of the device.. Finally, by blending two types of ZnO inks with different work functions at an appropriate ratio, the organic photodetector can successfully achieve the reduced dark current and increased photocurrent, resulting in an overall performance improvement. At a -1V bias voltage, the optimal device demonstrated a responsivity of 0.62 A/W, detectivity of 1.84×10^12 Jones, and EQE of 146.9 %. The rise time of 16.5 µs and fall time of 106.5 µs.

關鍵字(中)

★ 光偵測器
★ 有機
★ 電荷阻擋層

關鍵字(英)

★ photodetector
★ organic
★ charge blocking layer

論文目次

摘要 i
Abstract ii
致謝 iv
目錄 v
圖目錄 vii
表目錄 ixi
第一章緒論 1
1-1 前言 1
1-2 有機光電偵測器研究背景 3
1-3 研究動機 4
1-4 論文章節架構 8
第二章基本原理 9
2-1 有機光偵測器工作原理 9
2-2 有機光偵測器加入阻擋層原理 12
2-3 偵測器基本特性參數 13
第三章實驗方法與架構 17
3-1 實驗材料介紹 17
3-1-1 有機主動層材料 18
3-1-2 阻擋層材料 19
3-2 實驗儀器 21
3-2-1 手套箱(Glove Box) 21
3-2-2 熱蒸鍍機(Thermal Evaporation Coater) 21
3-2-3 原子層沉積(Atomic Layer Deposition, ALD) 23
3-2-4 紫外光臭氧清潔機(UV-Ozone) 24
3-2-5 阻抗分析儀(Impedance Analyzer) 25
3-2-6 旋轉塗佈機(Spin Coater) 25
3-2-7 半導體參數分析儀(Semiconductor Parameter Analyzer) 26
3-2-8 發光二極體(Light-Emitting Diode) 27
3-2-9 數位式示波器(Digital Oscilloscope) 27
3-2-10 UV-VIS-NIR分光光譜儀 28
3-3 有機光偵測器實驗方法及製程 29
第四章結果與討論 32
4-1 P3HT:PCBM有機光偵測器 32
4-1-1 P3HT:PCBM光學性質 34
4-1-2 改變有機半導體層厚度量測結果 35
4-2加入HfO2阻擋層對元件之影響 38
4-2-1 HfO2光學性質 38
4-2-2加入HfO2阻擋層結果 39
4-3加入ZnO.ac阻擋層對元件之影響 43
4-3-1 ZnO.ac光學性質 43
4-3-2加入ZnO.ac阻擋層結果 44
4-4 加入ZnO.np阻擋層對元件之影響 48
4-4-1 ZnO.np光學性質 49
4-4-2加入4.3 eV ZnO.np阻擋層結果 50
4-4-3加入3.9 eV ZnO.np阻擋層結果 54
4-4-4加入3.9 eV混和4.3 eV ZnO.np阻擋層結果 58
第五章結論與未來展望 64

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指導教授

張瑞芬(Jui-Fen Chang)

審核日期

2023-8-15

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