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以作者查詢圖書館館藏 、以作者查詢臺灣博碩士 、以作者查詢全國書目 、勘誤回報 、線上人數：52 、訪客IP：18.223.172.163
姓名 黃靖雄(Jing-Syong Huang) 查詢紙本館藏 畢業系所 機械工程學系 論文名稱 無電極接觸電化學製作N型奈米矽晶之研究
(Non-contact-Electrode Electrochemical Processing to Fabricate N-type Silicon Nanocrystals)相關論文 檔案 [Endnote RIS 格式]
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至系統瀏覽論文 ( 永不開放)
摘要(中) N型矽的電化學蝕刻普遍來說需施加外部輔助，達到電洞-電子對分離，生成電洞後才能有顯著的效果。近期也發展出在暗室中加入磁場、電場和PN接面……等，都能讓N-type矽成功製作出多孔矽。本研究先設計一新式垂直式蝕刻槽，以可拆卸式PN接面不加入金屬片輔助方式，在暗室的情況下施加電場進行研究。實驗結束後，能輕鬆拆除輔助的P-type矽，且電化學處理後N-type矽能保持潔淨且無汙染。實驗為使用不同摻雜濃度的N-type矽與不同摻雜濃度的P-type矽結合成PN接面進行電化學蝕刻，蝕刻完的試片再進行場發射掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、光致發光光譜儀(PL)分析。經由分析蝕刻後試片發現有光致發光的現象產生，在進行SEM、TEM分析後得出加上摻雜濃度達到一定量的P-type矽，實驗結果都會比單片N-type矽蝕刻來得更好，拍攝PL後估算出的奈米晶體尺寸也與TEM結果相吻合。 摘要(英) Electrochemical etching of N-type silicon generally requires external assistance to achieve hole-electron pair separation and generate significant effects. Recently, the addition of magnetic fields, electric fields, and PN junctions in a dark room has been developed, which allows successful fabrication of porous silicon from N-type silicon. In this study, a new vertical etching chamber was designed with a detachable PN junction, without the use of metal foil as an assistive method. The experiments were conducted in a dark room with the application of an electric field. After the experiments, the assistive P-type silicon could be easily removed, and the N-type silicon remained clean and uncontaminated after electrochemical treatment.The experiment involved combining N-type silicon with different doping concentrations and P-type silicon with different doping concentrations to form PN junctions for electrochemical etching. The etched samples were then analyzed using field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). Analysis of the etched samples revealed the occurrence of photoluminescence phenomena, and the results of SEM and TEM analyses showed that adding a certain amount of P-type silicon with appropriate doping concentrations yielded better results compared to etching single N-type silicon wafers. The estimated nanocrystalline grain size obtained from PL imaging also matched the results obtained from TEM analysis. 關鍵字(中) ★ PN接面
★ 新式垂直式蝕刻槽
★ 電化學處理
★ SEM
★ TEM
★ PL
★ 光致發光
★ 奈米晶體關鍵字(英) 論文目次 目錄
摘要………………………………………………………………………………………………………………………………………i
Abstrast…………………………………………………………………………………………………………………………ii
誌謝……………………………………………………………………………………………………………………………………iii
目錄………………………………………………………………………………………………………………………………………iv
圖目錄…………………………………………………………………………………………………………………………………vi
表目錄…………………………………………………………………………………………………………………………………ix
第一章 緒論……………………………………………………………………………………………………………………1
1-1 前言……………………………………………………………………………………………………………………1
1-2 研究背景……………………………………………………………………………………………………………1
1-3 研究動機及目的…………………………………………………………………………………………………2
第二章 原理與文獻回顧………………………………………………………………………………………………3
2-1 多孔矽理論………………………………………………………………………………………………………3
2-1-1 擴散限制模型(The Diffusion-Limit Model)……………………………3
2-1-2 貝爾模型(The Beale Model) ……………………………………………3
2-1-3 量子模型(The Quantum Model) ………………………………………3
2-2 多孔矽製作………………………………………………………………………………………………………4
2-2-1 乾式蝕刻法(Dry etching) …………………………………………………4
2-2-2 濕式蝕刻法(Wet etching) …………………………………………………4
2-2-3 電化學蝕刻法(Electrochemical etching)………………5
2-3 蝕刻機制……………………………………………………………………………………………………………5
2-3-1 氫氧根(hydroxyl)為底之蝕刻機制……………………………………5
2-3-2 氫氟根(hydrofluoride)為底之蝕刻機制………………………6
2-3-3 PN接面與電化學蝕刻關係…………………………………………………………8
第三章 實驗步驟與方法……………………………………………………………………………………………10
3-1 矽晶圓試片前處理………………………………………………………………………………………10
3-2 實驗設備介紹………………………………………………………………………………………………14
3-3 實驗步驟…………………………………………………………………………………………………………17
3-4 分析儀器…………………………………………………………………………………………………………20
第四章 結果與討倫………………………………………………………………………………………………………25
4-1 進行蝕刻實驗時的電壓電流圖………………………………………………………………25
4-2 蝕刻後矽晶圓於日光燈及UV燈下觀察結果……………………………………30
4-3 CFE-SEM表面形貌及剖面觀察結果……………………………………………………34
4-4 TEM觀察結果…………………………………………………………………………………………………53
4-5 PL觀察結果……………………………………………………………………………………………………56
第五章 結論與未來展望……………………………………………………………………………………………65
第六章 參考文獻……………………………………………………………………………………………………………66
圖目錄
圖2-1 矽表面多孔矽層與電化學拋光的I-V圖…………………………………………………6
圖2-2 PN接面示意圖……………………………………………………………………………………………………8
圖2-3 穩態時的能帶圖…………………………………………………………………………………………………9
圖3-1 六吋矽晶圓試片………………………………………………………………………………………………10
圖3-2 Twintex電源供應器………………………………………………………………………………………15
圖3-3 電源供應器附設軟體Programmable DC Power Supply…………15
圖3-4 雙槽垂直式蝕刻槽…………………………………………………………………………………………15
圖3-5 蝕刻槽內側構造………………………………………………………………………………………………16
圖3-6 白金電極……………………………………………………………………………………………………………16
圖3-7 電化學蝕刻實驗架設圖………………………………………………………………………………17
圖3-8 實驗流程圖………………………………………………………………………………………………………18
圖3-9 高強度紫外燈…………………………………………………………………………………………………20
圖3-10 CFE-SEM…………………………………………………………………………………………………………21
圖3-11 FIB……………………………………………………………………………………………………………………22
圖3-12 TEM……………………………………………………………………………………………………………………23
圖3-13 PL量測機台……………………………………………………………………………………………………24
圖4-1 N電壓、電流、時間關係圖………………………………………………………………………26
圖4-2 N/P電壓、電流、時間關係圖…………………………………………………………………26
圖4-3 N/P+電壓、電流、時間關係圖………………………………………………………………26
圖4-4 N/P++電壓、電流、時間關係圖……………………………………………………………27
圖4-5 N+ 電壓、電流、時間關係圖…………………………………………………………………27
圖4-6 N+/P 電壓、電流、時間關係圖……………………………………………………………27
圖4-7 N+/P+ 電壓、電流、時間關係圖…………………………………………………………28
圖4-8 N+/P++ 電壓、電流、時間關係圖………………………………………………………28
圖4-9 N++ 電壓、電流、時間關係圖………………………………………………………………28
圖4-10 N++/P 電壓、電流、時間關係圖………………………………………………………29
圖4-11 N++/P+ 電壓、電流、時間關係圖……………………………………………………29
圖4-12 N++/P++ 電壓、電流、時間關係圖…………………………………………………29
圖4-13 N、400X、俯視圖………………………………………………………………………………………36
圖4-14 N、200X、表面孔徑尺寸………………………………………………………………………36
圖4-15 N、200X、剖面圖………………………………………………………………………………………37
圖4-16 N/P、2000X、俯視圖………………………………………………………………………………37
圖4-17 N/P、100000X、表面孔徑……………………………………………………………………38
圖4-18 N/P、400X、剖面圖…………………………………………………………………………………38
圖4-19 N/P+、400X、俯視圖………………………………………………………………………………39
圖4-20 N/P+、400X、表面孔徑…………………………………………………………………………39
圖4-21 N/P+、200X、剖面圖………………………………………………………………………………40
圖4-22 N/P++、400X、俯視圖……………………………………………………………………………40
圖4-23 N/P++、400X、表面孔徑圖…………………………………………………………………41
圖4-24 N/P++、250X、剖面圖……………………………………………………………………………41
圖4-25 N+、2000X、俯視圖…………………………………………………………………………………42
圖4-26 N+、200X、剖面圖……………………………………………………………………………………42
圖4-27 N+/P、2000X、俯視圖……………………………………………………………………………43
圖4-28 N+/P、2000X、剖面圖……………………………………………………………………………43
圖4-29 N+/P+、2000X、俯視圖…………………………………………………………………………44
圖4-30 N+/P+、2000X、表面孔洞圖………………………………………………………………44
圖4-31 N+/P+、200X、剖面圖……………………………………………………………………………45
圖4-32 N+/P++、2000X、俯視圖………………………………………………………………………45
圖4-33 N+/P++、2000X、表面孔洞圖……………………………………………………………46
圖4-34 N+/P++、200X、剖面圖…………………………………………………………………………46
圖4-35 N++、2000X、俯視圖………………………………………………………………………………47
圖4-36 N++、2000X、剖面圖………………………………………………………………………………47
圖4-37 N++/P、2000X、俯視圖…………………………………………………………………………48
圖4-38 N++/P、2000X、剖面圖…………………………………………………………………………48
圖4-39 N++/P+、2000X、俯視圖………………………………………………………………………49
圖4-40 N++/P+、2000X、剖面圖………………………………………………………………………49
圖4-41 N++/P++、50X、俯視圖…………………………………………………………………………50
圖4-42 N++/P++、100000X、俯視圖………………………………………………………………50
圖4-43 N++/P++、400X、剖面圖………………………………………………………………………51
圖4-44 N++、100k、TEM圖……………………………………………………………………………………54
圖4-45 N++、500k、TEM圖……………………………………………………………………………………54
圖4-46 N++/P++、60k、TEM圖……………………………………………………………………………55
圖4-47 N++/P++、800k、TEM圖…………………………………………………………………………55
圖4-48 N、PL檢測圖、照射時間為5秒……………………………………………………………58
圖4-49 N/P、PL檢測圖、照射時間為10秒……………………………………………………58
圖4-50 N/P+、PL檢測圖、照射時間為10秒…………………………………………………59
圖4-51 N/P++、PL檢測圖、照射時間為10秒………………………………………………59
圖4-52 N+、PL檢測圖、照射時間為5秒…………………………………………………………60
圖4-53 N+/P、PL檢測圖、照射時間為10秒…………………………………………………60
圖4-54 N+/P+、PL檢測圖、照射時間為10秒………………………………………………61
圖4-55 N+/P++、PL檢測圖、照射時間為10秒……………………………………………61
圖4-56 N++、PL檢測圖、照射時間為5秒………………………………………………………62
圖4-57 N++/P、PL檢測圖、照射時間為5秒…………………………………………………62
圖4-58 N++/P+、PL檢測圖、照射時間為5秒………………………………………………63
圖4-59 N++/P++、PL檢測圖、照射時間為5秒……………………………………………63
表目錄
表3-1 N型矽晶圓規格………………………………………………………………………………………………11
表3-2 P型矽晶圓規格………………………………………………………………………………………………12
表3-3 試片清洗流程…………………………………………………………………………………………………13
表3-4 N型矽試片及P型矽試片實驗組合…………………………………………………………19
表4-1 N型矽晶圓(2-7 Ω-cm)蝕刻後於日光燈及紫外燈下的觀察結果…………………………………………………………………………………………………………………………………………31
表4-2 N型矽晶圓(0.01-0.018 Ω-cm)蝕刻後於日光燈及紫外燈下的觀察結果……………………………………………………………………………………………………………………………………32
表4-3 N型矽晶圓(0.001-0.0015 Ω-cm)蝕刻後於日光燈及紫外燈下的觀察結果………………………………………………………………………………………………………………………………33
表4-4 SEM結果整理表………………………………………………………………………………………………52
表4-5 PL測檢峰值結果……………………………………………………………………………………………64參考文獻 [1] R.P. Feynman, "Plenty of room at the bottom", APS Annual Meeting, 1959.
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