第三類半導體高效能微波拋光表面技術

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姓名

姚峻閔(Jun-Min Yao) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

第三類半導體高效能微波拋光表面技術
(Third-generation semiconductor high performance microwave planarization surface technology)

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[完整記錄]

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至系統瀏覽論文 ( 永不開放)

摘要(中)

本研究以微波對單晶碳化矽進行處理，以利於後續的拋光處理，有效提升單晶碳化矽的拋光效率。使用XPS、TEM及Mapping分析微波後碳化矽表面元素。使用精密天平量測碳化矽表面移除重量，計算移除速率。最後使用AFM量測未拋光試片、廠商提供的化學機械拋光(CMP)商用試片做對比。

摘要(英)

This study investigates the treatment of single crystal silicon carbide using microwaves, facilitating subsequent polishing and effectively improving the polishing efficiency of single crystal silicon carbide. XPS, TEM, and Mapping were used to analyze the surface elements of silicon carbide after microwave treatment. The removal weight of the silicon carbide surface was measured using a precision balance to calculate the removal rate. Finally, AFM was used to measure the surface roughness of unpolished samples, commercially available Chemical Mechanical Polishing (CMP) samples provided by manufacturers.

關鍵字(中)

★ 單晶碳化矽
★ 微波
★ 機械拋光

關鍵字(英)

★ Single crystal silicon carbide
★ Microwave
★ Mechanical polishing

論文目次

目錄
摘要 ··············································· i
Abstract ······································· ii
誌謝 ················································· iv
目錄 ·············································· v
圖目錄 ·········································· viii
表目錄 ········································· x
第一章緒論 ·································· - 1 -
1-1研究背景 ·········································· - 1 -
1-2研究動機 ······································ - 4 -
1-3研究方法 ······································· - 4 -

第二章文獻回顧 ································· - 5 -
2-1 單晶碳化矽的基本特性 ······························- 5 -
2-2機械拋光技術 ····································· - 6 -
2-2-1 機械拋光設備 ································· - 6 -
2-2-2 機械拋光移除速率計算 ··························· - 7 -
2-3 單晶碳化矽氧化方法 ······························· - 8 -
2-4 微波原理 ········································ - 15 -
2-4-1微波介紹 ······································· - 17 -

第三章實驗方法與步驟 ······························· - 18 -
3-1 實驗準備 ······································· - 18 -
3-1-1 實驗設備系統 ··························· - 18 -
3-1-2 實驗材料與器材說明 ·························· - 19 -
3-1-3 試片清洗流程 ·································· - 23 -
3-2 實驗檢測儀器 ··································· - 24 -
3-3-1 原子力顯微鏡 ································· - 24 -
3-3-2 雙束型聚焦離子束 ····························· - 25 -
3-3-3 高解析穿透式電子顯微鏡 ························· - 26 -
3-3-4 X射線電子分析儀 ······························· - 26 -
3-3 實驗流程 ······································· - 28 -
3-2-1 微波氧化溶液對SiC表面氧化反應實驗 ············· - 28 -
3-2-2 微波氧化對SiC拋光移除率影響實驗 ················ - 29 -
3-2-3 微波氧化對SiC表面粗糙度影響實驗 ················ - 31 -
第四章結果與討論 ·································· - 33 -
4-1 微波氧化溶液對SiC表面氧化反應實驗 ················· - 33 -
4-1-1 XPS拍攝結果 ··································· - 33 -
4-1-2 TEM拍攝結果 ··································· - 34 -
4-1-3 Mapping分析結果 ··························· - 34 -
4-2 微波氧化對SiC拋光移除率影響實驗 ·················· - 44 -
4-3 微波氧化對SiC表面粗糙度影響實驗 ··················· - 46 -

第五章結論與未來展望 ····························· - 53 -
5-1 結論 ············································ - 53 -
5-2 未來展望 ········································ - 54 -
第七章參考文獻 ····································· - 55 -
第八章附錄 ········································· - 58 -

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2023-7-5

推文