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姓名	方玅婷(Miao-Ting Fang)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	應用於5G系統毫米波頻段升降頻模組及使用連續模式技術高功率放大器之研製 (Development of up/down frequency conversion module and high power amplifiers using continuous mode technique for 5G millimeter wave systems)
檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 (2029-7-1以後開放)
摘要(中)	本論文研究方向為毫米波射頻升降模組研製與連續模式寬頻高功率放大器。射頻升降模組採用商用IC集成至印刷電路板上，PCB板材使用RO-FR4四層複合電路板實現；功率放大器採用穩懋0.15-µm InGaAs pHEMT 與0.25-µm GaN/SiC HEMT製程分別進行Ka頻段J類連續模式功率放大器，X頻段F類連續模式放大器之設計。 第二章為砷化鎵Ka頻段功率放大器，輸出匹配網路採用J類連續模式，完成基頻與二倍頻的匹配達到高效率與寬頻之性能，輸入和級間匹配則以最大功率作最大輸出匹配。量測結果顯示最佳傳輸增益為 14.9 dB，3dB 頻寬為 24.5 – 30.2 GHz；於大訊號量測下，飽和輸出功率為25.8 dBm，功率附加效率最高可達30.2 %；於26 GHz下64 QAM 且1.6 MHz 訊號頻寬之調變訊號量測下，於OP1dB回退9 dB時，平均輸出功率為16 dBm，加入 DPD 前後，ACPR 左通道與右通道為 -25.4 dBc 與 -26.5 dBc 降至 -40.6 dBc 與 -40.2 dBc，在 1.6 MHz 頻寬的量測，加入 DPD 前後EVM 為 8.4% 降至 2.1%。晶片面積為1.5 (1.5 × 1) mm2。 第三章為0.25-µm GaN 製程於 X 頻帶之F類連續模式放大器，透過偏壓挑選的方式，改善AM-AM 的線性度，電路沿用第二章連續模式，採用F類匹配達到寬頻且高效率之功率放大器。量測結果顯示最大傳輸增益為 18.7 dB，3dB 頻寬為8 - 11.4 GHz；於大訊號量測下，飽和輸出功率為32.8 dBm，1-dB增益壓縮點之輸出功率為31.4 dBm 與最大功率附加效率達 26.7 %，晶片面積為 2.5 (2.5 × 1) mm2。 第四章設計Ka頻段之射頻收發模組採用AWMF-0188晶片集成至印刷電路板上，模組中不僅有發射及接收模式外，還包含一旁路模式，有高度整合的優勢。發射旁路增益最大值為7.4 dB，接收旁路增益最大值為7.6 dB。發射模式下於射頻端3 dB頻寬從24 - 30 GHz，於24 GHz時轉換增益為11.1 dB，OP1dB為9.3 dBm；接收模式下，中頻輸出為4 GHz時最佳轉換增益為 8.3 dB，且雜訊指數為17.9 dB，模組面積為44.6 × 44 mm2。
摘要(英)	The thesis presents a Ka-band Continuous J power amplifier in 0.15-µm InGaAs pHEMT process and a X-band Continuous F power amplifier in 0.25-µm GaN/SiC HEMT process. The RF transceiver modules integrate commercial ICs onto printed circuit boards, with PCB materials utilizing RO-FR4 four-layer composite circuit boards. The first chip presents a Ka-band two-stage PA in GaAs process. The high efficiency and broadband performances are achieved by using continuous J that is matched for fundamental and second harmonic impedances. The measured maximum small-signal gain is 14.9 dB with a 1-dB bandwidth from 24.5 to 30.2 GHz, an output saturated power of 25.8 dBm, an output 1-dB compression point (OP1dB) of 25.6 dBm, and a peak PAE of 30.2 %. The chip size is 1.08mm2. The second chip presents a X-band broadband high efficiency power amplifier in GaN/SiC process. According to the analysis of large signal power gain, the appropriate bias voltage is selected to improve the AM-AM linearity. The high-efficiency and broadband performances are achieved by using continuous Class-F mode for the fundamental to third harmonics output matching network. The measured maximum small-signal gain is 18.7 dB with a 1-dB bandwidth from 8 to 11.4 GHz, an output saturated power of 32.8 dBm, an output 1-dB compression point (OP1dB) of 31.4 dBm, and a peak PAE of 26.7 %. The chip size is 2.5 mm2. Chapter 4 presents a Ka-band up/down frequency conversion module. The AWMF-0188 chip is integrated onto the printed circuit board. The module not only includes transmit and receive modes but also incorporates a bypass mode, offering highly integrated advantages. The maximum transmit bypass gain is 7.4 dB, and the maximum receive bypass gain is 7.6 dB. In transmit mode, the 3-dB bandwidth at the RF end ranges from 24 to 30 GHz. At 24 GHz, the conversion gain is 11.1 dB. In receive mode, the optimal conversion gain is 8.3 dB when the intermediate frequency output is at 4 GHz and a noise figure of 17.9 dB. The module area is 44.6 × 44 mm2.
關鍵字(中)	★ 功率放大器	關鍵字(英)
論文目次	摘要 V Abstract VI 致謝 VIII 目錄 X 圖目錄 XII 表目錄 XVIII 第一章 緒論 1 1.1研究動機及背景 1 1.2相關研究發展現況 1 1.3論文貢獻 2 1.4論文架構 3 第二章 應用連續J類技術於Ka頻段砷化鎵高功率放大器 4 2.1砷化鎵放大器研究現況 4 2.1.1 設計目標 6 2.2 功率放大器簡介 7 2.2.1 連續模式技術簡介 9 2.2.2共振腔的等效阻抗 11 2.3電路架構與設計 12 2.3.1 電晶體偏壓選擇 13 2.3.2電晶體尺寸分析 17 2.3.3輸出匹配設計 21 2.3.4級間及輸入匹配設計 27 2.3.5穩定度確認 28 2.4量測結果 29 2.5問題與討論 37 2.5.1 S參數除錯 38 2.5.2大訊號除錯 42 2.6總結 44 第三章 應用連續F類技術於X頻段氮化鎵高功率放大器 48 3.1氮化鎵功率放大器研究現況 48 3.1.1設計目標 48 3.2連續模式F類簡介 49 3.3電路架構與設計 53 3.3.1電晶體特性評估 53 3.3.2電晶體穩定電路 59 3.3.3輸出匹配設計 61 3.3.4穩定度確認 67 3.4量測結果 68 3.5總結 75 第四章 應用於第五代行動通訊系統毫米波頻段升降頻模組之研製 77 4.1簡介 77 4.1.1升降頻轉換晶片簡介 79 4.1.2巴倫 ( Balun ) 設計簡介 81 4.1.3串列周邊介面 (SPI Interface) 簡介 85 4.2混成電路(PCB)板材介紹 86 4.2.1RO-FR4複合四層板介紹 86 4.3模組設計與分析 87 4.3.1毫米波電路設計考量 87 4.4電路模組量測分析 93 4.4.1GCPW測試傳輸線量測分析 95 4.4.2升降頻模組量測分析 97 4.4.3 與LO模組整合量測分析 107 4.4.4 調變量測分析 110 4.5總結 117 第五章 結論與未來展望 119 參考文獻 121
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指導教授	張 鴻 埜(Hong-Yeh Chang)	審核日期	2024-7-9
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