極低溫下鰭式場效電晶體和平面場效電晶體之隨機摻雜凍結效應的實驗分析

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姓名

林睿耆(Rui-Qi Lin) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

極低溫下鰭式場效電晶體和平面場效電晶體之隨機摻雜凍結效應的實驗分析
(Experimental Analysis of Dopant Freeze-out Effect on Cryogenic FinFETs and Planar CMOS Devices)

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至系統瀏覽論文 (2029-7-17以後開放)

摘要(中)

隨著科技進步，太空科技的發展和量子電腦的推出，使得量子元件的研究變得尤為重要。因此對這些元件的研究需求大幅增加。極低溫 (Cryogenic Temperature) 金屬氧化物半導體場效電晶體 (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) 元件在廣泛的應用在量子電腦中，因為量子電腦主要運行在極低溫環境下。因此了解極低溫
環境下的元件特性是發展量子電腦的重要課題之一。在元件持續微縮的過程中，它們依然會受到許多變異源的影響，從而導致電性變化。然而對於極低溫環境下這些影響元件電性的變異源的研究相當稀少。
本研究針對十六奈米鰭式場效電晶體（Fin Field Effect Transistors, FinFETs）和三十六奈米平面場效電晶體（Planar Field Effect Transistors, Planar FETs）在極低溫下的製程變異源中的隨機摻雜擾動（Random Dopant Fluctuation, RDF）進行探討。首先通過基本的電性量測分析，了解低溫環境下的元件特性，接著通過大量量測獲得進行隨機摻雜擾動分析所需的數據，隨後進行離散摻雜劑分析（Discrete Dopant Profiling, DDP），觀察摻雜濃度分布，並分析隨機摻雜擾動的現象，最後分析隨機摻雜擾動影響的組成成分。
從實驗結果來看在極低溫環境下的隨機摻雜擾動的現象是較為明顯的，並且是會影響到電晶體的特性，使Vth 產生擾動，進而影響到汲極電流。

摘要(英)

With the advancement of technology, the development of space technology and the introduction of quantum computers have made the research of quantum components particularly important. Consequently, the demand for research on these components has significantly increased. Cryogenic temperature metal-oxide-semiconductor field-effect
transistor (MOSFET) devices are widely used in quantum computers because they primarily operate in extremely low-temperature environments.
Therefore, understanding the characteristics of components in cryogenic environments is a crucial topic for the development of quantum computers. During the continuous miniaturization of components, they are still affected by various sources of variation, leading to changes in electrical properties. However, research on the sources of variation that affects the electrical properties of components in cryogenic environments is relatively scarce.
This study investigates the random dopant fluctuation (RDF) in 16nm FinFETs and 36nm Planar FETs under cryogenic conditions. First, basic electrical measurements are conducted to understand the characteristics of the components in low-temperature environments. Then,
extensive measurements are performed to obtain the data required for the analysis of random dopant fluctuations. Subsequently, the discrete dopant profiling (DDP) is conducted to observe the distribution of dopant concentrations and analyze the phenomena of random dopant
fluctuations. Finally, the components affected by random dopant fluctuations are analyzed.
The experimental results indicate that the phenomenon of random dopant fluctuation in cryogenic environments is quite pronounced and affects the characteristics of transistors,
causing threshold voltage (Vth) fluctuations and consequently impacting the drain current.

關鍵字(中)

★ 鰭式場效電晶體
★ 平面場效電晶體
★ 隨機摻雜擾動
★ 極低溫

關鍵字(英)

論文目次

摘要 .................................................................................................................... I
Abstract ............................................................................................................ II
致謝 ................................................................................................................. III
圖目錄 ............................................................................................................. VI
一、導論 ........................................................................................................... 1
1-1 背景 ....................................................................................................... 1
1-2 研究動機 ............................................................................................... 3
1-3 論文架構 ............................................................................................... 4
二、元件介紹及實驗規劃 ............................................................................... 6
2-1 平面場效電晶體(Planar FETs) ............................................................. 6
2-2 鰭式場效電晶體(FinFETs) ................................................................... 6
2-3 實驗規劃與測量儀器 ........................................................................... 7
三、實驗方法 ................................................................................................... 9
3-1 量測方式 ............................................................................................... 9
3-2 參數分析 ............................................................................................... 9
3-3 多變數分析 ......................................................................................... 10
四、極低溫電性分析 ..................................................................................... 12
4-1 極低溫Planar FETs 電性分析 ........................................................... 12
4-2 極低溫FinFETs 電性分析 ................................................................. 15
五、極低溫離散摻雜劑分析 ......................................................................... 18
5-1 離散摻雜劑分析(Discrete Dopant Profiling, DDP) ........................... 18
5-2 Planar FETs 極低溫RDF 分析 ........................................................... 22
5-3 FinFETs 極低溫RDF 分析 ................................................................ 25
5-4 Planar FETs 和FinFETs 之比較 ......................................................... 28
六、RDF 影響組成分析 ................................................................................ 40
6-1 Planar FETs 影響組成分析 ................................................................ 40
6-2 FinFETs 影響組成分析 ...................................................................... 54
七、結論 ......................................................................................................... 68
Reference ......................................................................................................... 69

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指導教授

謝易叡

審核日期

2024-7-18

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