在厚緩衝層矽基板上研發不同閘汲間距的1200 V加強型氮化鎵電晶體

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姓名

王怡雯(Yi-Wen Wang) 查詢紙本館藏

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電機工程學系

論文名稱

在厚緩衝層矽基板上研發不同閘汲間距的1200 V加強型氮化鎵電晶體
(Development of 1200 V E-mode AlGaN/GaN HEMTs on Si substrate with thick buffer layer)

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摘要(中)

提高GaN-on-Si元件的崩潰電壓是一個重要的設計考量，本實驗採用了相對較厚(6.5 μm)的碳摻雜緩衝層作為磊晶的一部分，並生長在低阻值的矽基板上。通過閘汲間距(LGD)尺寸的評估和公式推導，預測元件的尺寸和崩潰電壓的關係。利用Silvaco TCAD軟體對不同閘汲間距元件進行電性分析和崩潰電壓預測，並在此磊晶結構上製作出加強型氮化鎵閘極電晶體以進行量測分析和比較。後續並探討了不同緩衝層厚度對崩潰電壓的影響，以期能了解GaN-on-Si的磊晶緩衝層對不同崩潰電壓規格的關係，進而得到適當元件結構及減少磊晶成本。
不同閘汲間距的p-GaN gate AlGaN/GaN HEMTs元件，在矽基板接地的設定下進行崩潰電壓量測。當LGD = 8 μm時，元件在汲極漏電流達1 mA/mm時的崩潰電壓為1298 V，LGD = 11 μm則為1742 V，其特徵導通電阻(RON,SP)分別為1.55 m∙cm2和 1.77 m∙cm2。通過觀察汲極、閘極和垂直方向的緩衝層基板漏電流，發現在LGD = 8 μm的設計中，崩潰電壓的主要限制並非來自垂直方向的緩衝層基板漏電流，原因是由於閘汲間距短，使緩衝層厚度的漏電流影響變成非影響崩潰電壓的主因，而在LGD = 11 μm的元件中，垂直方向的緩衝層基板漏電流則成為崩潰電壓的主要限制因素。同時也觀察實驗室之前的製程元件，在LGD > 11 μm的元件中，垂直方向的緩衝層基板漏電流確認為崩潰電壓的主要限制因素。
雖然此實驗主要採用6.5 μm的碳摻雜緩衝層為製程晶片，但最後利用Silvaco TCAD軟體進行不同緩衝層厚度對崩潰電壓的分析，在使用相同元件結構設計(LGD = 8 μm)，並以維持1200 V崩潰電壓的前提下，對不同緩衝層厚度進行研究。根據模擬結果，緩衝層厚度可從本實驗所使用之6.5 μm縮減至4.5 μm，仍然在汲極漏電流定義在1 mA/mm時，達到1251 V的崩潰電壓。

摘要(英)

Improving the blocking voltage of GaN-on-Si devices is an important design consideration. In this experiment, a relatively thick (6.5 μm) carbon-doped buffer layer was used as part of the epitaxial structure, grown on a low-resistivity silicon substrate. By estimating the gate-drain distance (LGD) dimension and formula derivation, the relationship between device size and blocking voltage was observed. Using Silvaco TCAD simulation, the electrical characteristics and blocking voltage prediction of devices with different gate-drain distances were analyzed. Enhancement-mode GaN gate transistors were then fabricated on this epitaxial structure for measurement and analysis. The impact of different buffer layer thicknesses on the blocking voltage was investigated, in order to understand the relationship between the GaN-on-Si epitaxial buffer layer and the blocking voltage specifications, and to obtain the appropriate device structure and reduce manufacturing costs.

p-GaN gate AlGaN/GaN HEMTs devices with different gate-drain distances were measured for off-state blocking voltage under silicon substrate conditions. When LGD = 8 μm, the device exhibited a blocking voltage of 1298 V at a drain leakage current of 1 mA/mm, and when LGD = 11 μm, the blocking voltage was 1742 V, with corresponding specific on-resistance (RON,SP) values of 1.55 mΩ·cm2 and 1.77 mΩ·cm2, respectively. By observing the drain, gate, and vertical substrate leakage currents, it was found that for the LGD = 8 μm design, the primary limitation on blocking voltage was not the vertical buffer substrate leakage current, likely due to the short gate-drain distance. In contrast, for the LGD = 11 μm design, the vertical buffer substrate leakage current became the main limiting factor for the blocking voltage. Previous experiments also confirmed that for devices with LGD larger than 11 μm, the vertical buffer substrate leakage current was the primary limitation for the blocking voltage.

Although this experiment primarily used a 6.5 μm carbon-doped buffer layer, Silvaco TCAD simulations were ultimately performed to analyze the impact of different buffer layer thicknesses on the blocking voltage. Using the same device structure design (LGD = 8 μm) and maintaining a 1200 V blocking voltage, the study was conducted for various buffer layer thicknesses. The simulation results showed that the buffer layer thickness could be reduced from the 6.5 μm used in this experiment to 4.5 μm, while still achieving a 1251 V blocking voltage at a drain leakage current of 1 mA/mm.

關鍵字(中)

★ 氮化鎵
★ p型氮化鎵閘極氮化鋁鎵 /氮化鎵高電子遷移率電晶體

關鍵字(英)

★ GaN
★ p-GaN gate AlGaN/GaN HEMT

論文目次

中文摘要 I
Abstract II
致謝 III
圖目錄 V
表目錄 X
第一章緒論 1
1.1 前言 1
1.2 寬能矽GaN半導體材料特性 3
1.3 P型氮化鎵閘極電晶體及崩潰電壓與導通電阻改善方法 4
1.3.1大於1200 V加強型氮化鎵閘極電晶體之閘汲極間距文獻回顧 4
1.3.2崩潰電壓與導通電阻改善方法 11
1.4 研究動機與目的 19
1.5 論文架構 20
第二章氮化鎵電晶體之磊晶結構與元件模擬分析 21
2.1氮化鋁鎵/氮化鎵於矽基板之磊晶結構與特性 21
2.2元件之閘汲極間距設計與尺寸評估 27
2.3元件之閘汲極不同尺寸模擬 30
2.4 P-GaN gate AlGaN/GaN HEMTs之佈局與製程流程 38
2.4.1元件佈局 38
2.4.2 P-GaN gate AlGaN/GaN HEMTs之製程流程 39
2.5結論 44
第三章 P型氮化鎵閘極之不同閘汲間距元件量測與分析 45
3.1元件基本電性量測 46
3.2元件直流電性量測 50
3.3元件崩潰電壓之矽基板接地量測 54
3.4元件崩潰電壓之緩衝層厚度分析 61
3.5結論 69
結論 72
參考文獻 73
附錄 I 詳細製程流程 76
Acknowledgement 79

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指導教授

辛裕明

審核日期

2024-8-22

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