摘要(英) |
This research is focus on Fabrication and Characteristic Analysis of InP Based Heterojunction Bipolar Transistors. First, we invent a new technique to prevent BCB remain on the contact window. By using this technique, we invent " Quick Process of HBT RF device" .
In order to reduce current blocking effect, we use a composite collector structure to minimize the conduction band discontinuity. We demonstrate max current density above 200kA/cm2 and cutoff frequency about 120GHz. Final, In order to reduce the space charge time, we scale down our device to 1x10um2. |
參考文獻 |
參考文獻
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