空乏型暨增強型Metamorphic HEMT之製作與研究

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姓名

吳勁昌(Jing-Chung Wu) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

空乏型暨增強型Metamorphic HEMT之製作與研究
(Fabrication of Depletion & Enhancement mode Metamorphic HEMT)

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摘要(中)

本論文首先介紹metamorphic HEMT在不同銦含量(In content 30％~60％)的磊晶結構。我們在銦含量為30％的功率型mHEMT的磊晶結構中加入了如pHEMT般的假性通道以增加其電流密度，期望能有更加的功率特性。此外我們在銦含量為50％及60％的高速型mHEMT中再以不同的閘極金屬製作出空乏型(Ti/Pt/Au)以及增強型(Pt/Ti/Pt/Au)的電晶體。利用Pt/Ti/Pt/Au閘極在高溫製程之中會擴散到其蕭特基層的特性，控制閘極金屬到通道層的距離以達到增加門檻電壓的效果，進而實現增強型電晶體的目標。再以本實驗室的量測系統分析各種電晶體在直流、高頻以及功率特性的差異。並由直流量測資料計算出Pt/Ti/Pt/Au閘極的擴散深度，由高頻量測資料分析出電子在增強型以及空乏型電晶體中各個部位的延遲時間以及粹取出兩種電晶體的小訊號參數。藉此來比較此兩種型態的電晶體在高頻特性中的影響。

摘要(英)

This paper introduces the metamorphic HEMT in different Indium content. We add the pseudomorphic channel like pHEMT in order to increase the current density and the power performance. Besides that, we try to fabricate the depletion & enhancement mode device using different gate metal in the In=50% & 60% mHEMT samples. We use the Pt diffusion to decrease the distance between the gate metal and channel and enhance the device threshold voltage to reach the enhancement mode device purpose.And we use the measurement system in our lab to measure the difference of DC, RF, Power characteristics. By the measurement data we calculate the diffusion depth of Pt gate and using the RF data to extract the small signal model elements and the electron transient time to analyse the performance difference between depletion and enhancement mode device.

關鍵字(中)

★ 小信號模型
★ 元件製程
★ 異質接面高速電晶體

關鍵字(英)

★ Metamorphic HEMT
★ Device Process
★ small signal parameter

論文目次

第一章導論

1-1 研究動機

1-2 論文架構

第二章 InAlAs/InGaAs mHEMT 在GaAs基板上結構與製程

2-1 metamorphic HEMT介紹2-2 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.3；0.45) 磊晶結構介紹

2-3 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.5；0.6) 磊晶結構介紹

2-4 元件製作流程

第三章 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.3；0.45)製作與量測結果

3-1功率型mHEMT直流量測結果

3-2 功率型mHEMT高頻量測結果

3-3 功率型mHEMT功率量測結果

3-4 元件Kink Effect與游離撞擊

3-5 總結

第四章 InxAl1-xAs/InxGa1-xAs mHEMT (x=0.5；0.6)製作與量測結果

4-1 空乏型mHEMT量測與分析

4-2 增強型mHEMT製作與量測分析

4-3高速mHEMT功率量測結果與比較

4-4小信號參數粹取與分析

4-5 延遲時間分析

4-6 總結

第五章結論

參考文獻

參考文獻

[1] Zaknoune, M.; Bonte, B.; Gaquiere, C.; Cordier, Y.; Druelle, Y.; Theron, D.; Crosnier, Y.; “InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage, ” Electron Device Letters, IEEE , Volume: 19 , Issue: 9 , Sept. 1998 Pages:345 - 347
[2] Kawano, M.; Kuzuhara, T.; Kawasaki, H.; Sasaki, F.; Tokuda, H.; “InAlAs/InGaAs metamorphic low-noise HEMT, ”Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters] , Volume: 7 , Issue: 1 , Jan. 1997 Pages:6 – 8
[3] Bollaert, S.; Cappy, A.; Cordier, Y.; Happy, H.; Hoel, V.; Lepilliet, S.; Zaknoune, M.; “Metamorphic In0.4Al0.6As/In0.4Ga 0.6As HEMTs on GaAs substrate, ” IEEE Electron Device Letters , Volume: 20 Issue: 3 , Mar 1999 Page(s): 123 -125
[4] Bollaert, S.; Cappy, A.; Cordier, Y.; Happy, H.; Hoel, V.; Lepilliet, S.; Zaknoune, M.; “Metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: the influence of In composition, ” Electron Devices Meeting, 1998. IEDM ''98 Technical Digest., International , 6-9 Dec 1998 Page(s): 235 -238
[5] Adesida, I.; Cueva, G.; Dumka, D.C.; Hoke, W.E.; Lemonias, P.J.; “Metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on GaAs substrate with fT over 200 GHz, ” Electron Devices Meeting, 1999. IEDM Technical Digest. International , 1999 Page(s): 783 -786
[6] Buhles, P.M.; Hoke, W.E.; Kazior, T.E.; Lardizabal, S.M.; Marsh, P.F.; McCarroll, C.P.; McTaggart, R.A.; Whelan, C.S.; “A comparison of channel indium content in low noise metamorphic HEMTs with InxGa1-xAs (0.3[7] Hoke, W.F.; Kazior, T.E.; Lardizabal, M.; Lyman, P.S.; Marsh, P.F.; McTaggart, R.A.; Whelan, C.S.; “Low noise In0.32(AlGa)0.68As/In0.43Ga0.57 As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density , ” IEEE Electron Device Letters , Volume: 21 Issue: 1 , Jan 2000 Page(s): 5 -8
[8] Bonte, B.; Cordier, Y.; Crosnier, Y.; Druelle, Y.; Gaquiere, C.; Theron, D.; Zaknoune, M.; “InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage, ” EEE Electron Device Letters , Volume: 19 Issue: 9 , Sep 1998 Page(s): 345 -347
[9] Hoke, W.E.; Kazior, T.E.; Leoni, R.E., III; Lichwala, S.J.; Lyman, P.S.; Marsh, P.F.; McTaggart, R.A.; Whelan, C.S.; “High breakdown voltage InAlGaAs/In0.32Ga0.68As metamorphic HEMT for microwave and MM-wave power applications, ” Microwave Symposium Digest, 1999 IEEE MTT-S International , Volume: 3 , 1999 Page(s): 1187 -1190 vol.3
[10] Dong Min Kang; Hyung Sup Yoon; Jae Yeob Shim; Jin Hee Lee; Ju Ycon Hong; Kyung Ho Lee; Seong Jin Kim; Woo Jin Chang; “Low noise characteristics of double-doped In/sub 0.52/Al/sub 0m48/As/In/sub 0/53/Ga/sub 0.47/As power metamorphic hemt on gaas substrate with wide head t-shaped gate, ” Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th , 2002 Page(s): 201 -204
[11] Cappy, A.; Cordier, Y.; Druelle, Y.; Favre, J.; Legry, P.; Lepilliet, S.; Win, P.; “Microwave performance of 0.4 μm gate metamorphic In0.29 Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate, ” Electronics Letters , Volume: 29 Issue: 2 , 21 Jan 1993 Page(s): 169 -170
[12] Boudrissa, M.; Cordier, Y.; De Jaeger, J.C.; Delos, E.; Theron, D.; “Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34 As HEMT on GaAs substrate with high breakdown voltage, ” IEEE Electron Device Letters , Volume: 21 Issue: 11 , Nov 2000 Page(s): 512 -514
[13] Adam, D.; Cappy, A.; Cordier, Y.; Druelle, Y.; Favre, J.; Win, P.; “Metamorphic In0.3Ga0.7As/In0.29Al 0.71As layer on GaAs: a new structure for millimeter wave ICs, ” High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in , 2-4 Aug 1993 Page(s): 511 -519
[14] Cappy, A.; “Metamorphic InGaAs/AlInAs heterostructure field effect transistors: layer growth, device processing and performance, ” Indium Phosphide and Related Materials, 1996. IPRM ''96., Eighth International Conference on , 21-25 April 1996 Pages:3 – 6
[15] Dumka, D.C.; Hoke, W.E.; Lemonias, P.J.; Cueva, G.; Adesida, I.; “High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on GaAs substrates, ” Electron Device Letters, IEEE , Volume: 22 , Issue: 8 , Aug. 2001
Pages:364 – 366
[16] Mahajan, A.; Arafa, M.; Fay, P.; Caneau, C.; Adesida, I. “Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP, ” Electron Devices, IEEE Transactions on , Volume: 45 , Issue: 12 , Dec. 1998 Pages:2422 – 2429
[17] Mahajan, A.; Fay, P.; Arafa, M.; Cueva, G.; Adesida, I.; “Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors, ” Electron Devices Meeting, 1996., International , 8-11 Dec. 1996 Pages:51 – 54
[18] L.Sadwick, C.Kim, K.Tan, and D.Streit, “Scottky barrier heights of n-type and p-type Al0.48In0.52As, ” IEEE Electron Device Lett., vol.18,pp. 626-628,1997
[19] N.Harada, S,Kuroda, T.Katakami, K.Hikosaka, T.Mimura, and M.Abe, “Pt-based gate enhancement-mode InAlAs/InGaAs HEMT’s for large-scale integration,” in Proc. 3rd Int. Conf. InP and Related Material, 1991, pp. 377-380
[20] A.Fricke, G.Stareev, T.Kummetz, D.Sowada, J.Mahnss, W.Kowalsky, and K.Ebeling, “1.09-eV Scottky barrier height of nearly ideal Pt/Au contact directly deposited on n- and p+n- Al0.48In0.52As layers, ” Appl. Phys. Lett., vol.65, pp.755-757, 1994
[21] Harada, N.; Kuroda, S.; Katakami, T.; Hikosaka, K.; Mimura, T.; Abe, M.; “Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration, ” Indium Phosphide and Related Materials, 1991., Third International Conference. , 8-11 April 1991 Pages:377 - 380
[22] Suemitsu, T.; Enoki, T.; Tomizawa, M.; Shigekawa, N.; Ishii, Y.; “Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs, ” Indium Phosphide and Related Materials, 1997., International Conference on , 11-15 May 1997 Pages:365 – 368
[23] Ernst, A.N.; Somerville, M.H.; Del Alamo, J.A.; “Dynamics of the kink effect in InAlAs/InGaAs HEMTs, ” Electron Device Letters, IEEE , Volume: 18 , Issue: 12 , Dec. 1997 Pages:613 – 615
[24] Dambrine, G.; Cappy, A.; Heliodore, F.; Playez, E.; “A new method for determining the FET small-signal equivalent circuit, ” Microwave Theory and Techniques, IEEE Transactions on , Volume: 36 , Issue: 7 , July 1988 Pages:1151 – 1159
[25] 呂學士,本城和彥 “微波通訊半導體電路” pp.2-16~2-26
[26] Moll, N.; Hueschen, M.R.; Fischer-Colbrie, A.; “Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs, ” Electron Devices, IEEE Transactions on , Volume: 35 , Issue: 7 , July 1988 Pages:879 – 886
[27] Enoki, T.; Arai, K.; Ishii, Y.; “Delay time analysis for 0.4- to 5-μm-gate InAlAs-InGaAs HEMTs, ” Electron Device Letters, IEEE , Volume: 11 , Issue: 11 , Nov. 1990 Pages:502 – 504

指導教授

詹益仁(Yi-Jen Chan)

審核日期

2004-6-23

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