大面積矽微條偵測器之製程改善

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塗俊价(Chun-Chieh Tu) 查詢紙本館藏

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電機工程學系

論文名稱

大面積矽微條偵測器之製程改善
(Process Improvements of Large-Area Silicon Strip Detector)

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摘要(中)

本論文的主要目的是藉由製程的探討進而改善大面積矽偵測器的漏電流及崩潰電壓。在製程方面針對墊氧化層的沈積方式、不同的前段製程、金屬層材料、以及晶背蝕刻技術等技巧做比較及研究，目的均是在減少及抑制缺陷的產生，進而使元件特性獲得改善。
此外，在元件結構方面還利用實驗測試鍵（test-key）及模擬軟體的協助，來獲得更佳的元件幾何參數，例如防護圈配置及正面電極延伸長度等。

摘要(英)

In order to obtain the better performances, such as lower leakage current and higher breakdown voltage, of a large-area silicon strip detector. Its device the structure design and process improvements have been studied in this thesis.
Several different processes had been used to fabricate the detectors and the obtained device characteristics were compared. A suitable process of pad oxide could reduce the Si/SiO2 interface defects, and the improved front-end and metallization processes could also reduce detector leakage current. The one with the multiple guard-rings with reduced spacing could be used to obtain a better device performance than the one with uniform spacing and the suitable metal overhang could reduce the device leakage current, as evidenced by the verification of simulation data with experimental results of test-keys. Also, it had been concluded that the sidewall junction of P+-strip was the main source of device leakage current.

關鍵字(中)

★ 矽偵測器

關鍵字(英)

★ silicon detector

論文目次

CONTENTS
Table Captions..............................................................III
Figure Captions..............................................................IⅤ
Chapter 1 INTRODUCTION.....................................................1
Chapter 2 DESIGN CONSIDERATIONS AND FABRICATOION PROCESSES.................6
2.1 Fundamental Considerations...............................................6
2.2 Device Design...........................................................11
2.3 Processes................................................................12
Chapter 3 EFFECTS OF DIFFERENT PROCESS CONDITIONS ON DEVICE PERFORMANCES...22
3.1 Effects of deposition process of pad oxide...............................22
3.2 Effects of pre-cleaning process..........................................23
3.3 Effects of metallization.................................................24
3.4 Effects of backside etching..............................................24
3.5 Effects of guard-rings...................................................25
3.6 Some defects of process..................................................26
3.7 Summaries................................................................26
Chapter 4 TEST-KEYS........................................................42
4.1 Guard-ring metal overhang................................................42
4.2 Guard-ring width.........................................................43
4.3 Sidewall leakage current.................................................43
4.4 Multiple guard-rings.....................................................44
4.5 Summaries................................................................45
Chapter 5 CONCLUSION.......................................................55
REFERENCES...................................................................57

參考文獻

[1]A. H. Walenta,“Principles and New Development of Semiconductor Radiation Detectors”, Nuclear Instruments and Methods in Physics Research A253, pp.558-571, 1987.
[2]A. C. Melissinos, “Experiments in Modern Physics”, Academic Press, Inc., New York, USA, 1989.
[3]G. F. Knoll, “Radiation Detection and Measurement”, 2nd ed., John Wiley & Sons, Inc., New York, USA, 1989.
[4]S. M. Sze, “Semiconductor Sensors”, John Wiley & Sons, Inc., New York, USA, 1994.
[5]E. Gatti and P. Rehak, “Semiconductor Drift Chamber - an Application of a Novel Charge Transport Scheme”, IEEE Trans. on Electron Devices, ED-29, p.1388, 1982; also Proc. 2nd Pisa Meeting on Advanced Detectors, Grosseto, Italy, in Nuclear Instruments and Methods in Physics Research 225, pp.608-614, 1984.
[6]E. Gatti, P. Rehak, and J. T. Walton, “Silicon Drift Chamber First Results and Optimum Processing of Signals”, Nuclear Instruments and Methods in Physics Research 226, pp.129-141, 1984.
[7]L. Struder, G. Lutz, M. Sterzik, P. Holl, J. Kemmer, U. Prechtel, T. Ziemann and P. Rehak “First Tests with Fully Depleted pn-CCD's”, IEEE Trans. On Nuclear Science, Vol. 35, No. 1, pp. 372-376, 1988
[8]V. Radeka, P. Rehak, S. Rescia, E. Gatti, A. Longoni, M. Sampietro, G. Bertuccio, P. Holl, L. Struder, and J. Kemmer, “Implanted Silicon JFET on Completely Depleted High-Resistivity Devices”, IEEE Electron Device Letters, Vol. 10, No.2, pp.91-93, 1989.
[9]J. Kemmer and G. Lutz, “New Structures for Position Sensitive Semiconductor Detectors”, Nuclear Instruments and Methods in Physics Research A273, pp.588-598, 1988.
[10]H. Becker, T.Boulos, P. Cattaneo, H. Dietl, D. Hauff, E. Lange, G. Lutz, H. G. Meser, A.S. Schwartz, R. Settles, L. Struder, J. Kemmrr, U. Prechtel, T. Ziemann, and W. Buttler, “New Developments in Double Sided Strip Detectors”, IEEE Trans. On Nuclear Science, Vol. 37, No. 4, pp.101-106, 1990.
[11]Alvsvaag, S.J.; Maeland, O.A.; Klovning, A.; Benvenuti, A.C.; Giordano, T.; Guerzoni, M.; Navarria, F.L.; Verardi, M.G.; Camporesi, T.; Vallazza, E.; Bozzo, M.; Cereseto, R.; Barreira, G.; Espirito Santo, M.C.; Maio, A.; Onofre, A.; Peralta, L.; Pimenta, “A Silicon Pad Shower Maximum Detector for a "Shashlik" Calorimeter “IEEE Trans. On Nuclear Science, Vol.42, No.4, pp. 469-473, 1995.
[12]Avrillon, S.; Ikeda, H.; Matsuda, T.; Asano, Y.; Tsuchiya, S.; Saitoh, Y.; Inoue, M.; Yamanaka, J. “Performance of a pMOS Pixel To Be Used in Radiation Detectors “, IEEE Trans. On Nuclear Science, Vol.43, No.3, pp. 1161-1164, 1996.
[13]Passeri, D.; Ciampolini, P.; Baroncini, M.; Santocchia, A.; Bilei, G.M.; Checcucci, B.; Fiandrini, E, “Comprehensive Modeling of Silicon Microstrip Detectors “, IEEE Trans. On Nuclear Science, Vol.44, No.3, pp. 598-605, 1997.
[14]G. Batignani, L. Bosisio, A. Conti, E. Focardi, F. Forti, M. A. Giorgi, M. Grandi, G. Parrini, P. Tempesta, G. Tonelli, and G. Triggiani, “Test Results on Double-Side Readout Silicon Strip Detectors”, IEEE Trans. On Nuclear Science, Vol.36, No. 1, pp. 40-45, 1989.
[15]Saitoh, Y.; Akamine, T.; Inoue, M.; Yamanaka, J.; Kadoi, K.; Takano, R.; Kojima, Y.; Miyahara, S.; Kamiya, M.; Ikeda, H.; Matsuda, T.; Tsuboyama, T.; Ozaki, H.; Tanaka, M.; Iwasaki, H.; Haba, J.; Higashi, Y.; Yamada, Y.; Okuno, S.; Avrillon, S.; Nemoto, T, ” Fabrication of a Double-Sided Silicon Microstrip Detector with an ONO Capacitor Dielectric Film”, IEEE Trans. On Nuclear Science, Vol.43, No.3 pp. 1123-1129, 1996.
[16]Iwata, Y.; Ohsugi, T.; Fujita, K.; Kitabayashi, H.; Yamamoto, K.; Yamamura, K.; Unno, Y.; Kondo, T.; Terada, S.; Kohriki, T.; Asai, M.; Nakano, I.; Takashima, R., “Optimal p-Stop Pattern for the N-side Strip Isolation of Silicon Microstrip Detectors”, IEEE Trans. On Nuclear Science, Vol.45, No.3, pp. 303-309, 1998.
[17]Saitoh, Y.; Akamine, T.; Inoue, M.; Yamanaka, J.; Echigo, N.; Miyahara, S.; Kamiya, M.; Ikeda, H.; Matsuda, T.; Bozek, A.; Haba, J.; Koike, S.; Ozaki, H.; Tanaka, M.; Iwasaki, H.; Higashi, Y.; Tsuboyama, T.; Yamada, Y.; Banas, E.; Natkaniec, Z.; Palka, H., “ Performance of A Double-Sided Silicon Microstrip Detector with a Wide-Pitch N-side Readout Using a Field-Plate and A Multi P-stop structure“, Conference Record of IEEE 1996 Nuclear Science Symposium Conference, Vol. 1, No. 3, pp. 181 -185, 1996.
[18]Tsuboyama, T.; Haba, J.; Ikeda, H.; Iwasaki, H.; Matsuda, T.; Ozaki, H.; Tanaka, M.; Yamada, Y.; Saito, Y.; Akamine, K.; Inoue, M.; Yamanaka, J.; Kadoi, K.; Takano, R.; Kojima, Y.; Miyahara, S.; Kamiya, M.; Okuno, S.; Avrillon, S.; Hazumi, M.; Nagashima, “Test of A Double-Sided Double-Metal Silicon Microstrip Detector with An ONO Insulator, “Conference Record of IEEE 1995 Nuclear Science Symposium and Medical Imaging Conference Vol. 1 , pp. 192 –195,1995.
[19]Alexander, J.P.; Bebek, C.J.; Browder, T.E.; Dobbins, J.A.; Gray, S.G.; Honscheid, K.; Jones, C.D.; Katayama, N.; Katris, J.S.; Kim, P.C.; Selen, M.; Worden, H.M.; Wurthwein, F.; Gronberg, J.; Morrison, R.J.; Hale, D.L.; Korte, C.; Kyre, S.; Nelson, H.N.; “Studies of Double-Sided, Double-Metal Silicon Microstrip Detectors”, Conference Record of IEEE 1992 Nuclear Science Symposium and Medical Imaging Conference Vol. 1, pp. 224 -226, 1992
[20]The Website of CMS outreach http://cmsinfo.cern.ch/Welcome.html/CMSmedia/CMSphotos/index.html
[21]Warner Ten Kate, “The Silicon Microstrip Detector”. (a copy of transparencies)
[22]B. Hyams, U. Koetz, E. Belau, R. Klanner, G. Lutz, E. Neugebauer, A. Wylie and J. Kemmcr, “A Silicon Counter Telescope to Study Short-lived Particles in High-energy Hadronic Interactions”, Nuclear Instruments and Methods in Physics Research 205, pp.99-105, 1983.
[23]S. M. Sze, “Physics of Semiconductor Devices”, John Wiley & Sons, Inc., New York, USA, 1981.
[24]M. Campanella,N. Croitoru, F. Groppi, F. Lemeilleur, S. Pensotti, P. G. Rancoita, and A. Seidman, “The Effect of Radiation on Ion-Implanted Silicon Detectors”, Nuclear Instruments and Methods in Physics Research A243, pp.93-97, 1986.
[25]G. Batignani, L. Bosiso, E. Forcardi, F. Forti, M. A. Giorgi, L. Moneta, G. Parrini, G. Tonelli, and G. Triggiani, “Development and Performance of Double Sided Silicon Strip Detecrors”, Nuclear Instruments and Methods in Physics Research A310, pp.160-164. 1991.
[26]P. Hell, J. Kemrner, U. Prrchtel, T. Ziemann, D. Hauff, G. Lutz, A. S. Schwarz, and L. Struder, “A Double-Sided Silicon Strip Detector with Capacitive Readout and a New Method of Integrated Bias Coupling”, IEEE Trans. On Nuclear Science, Vol. 36, No.1, pp.251-255, 1989.
[27]W. T. Lin, Y. H. Chang, A. E. Chen, K. T. Huang, and W. C. Tsay, “PHOSBOS Silicon Sensor Production at NCU”, PHOROS project review of quarter 2, National Brookhaven Laboratory, June 18, 1997.
[28]B. J. Baliga, “ Modern Power Devices”, John Wiley & Sons, Inc., New York, USA, 1987.
[29]Wen-Chin Tsay; Jyh-Wong Hong; Chen, A.; Lin, W.T.; Hsien-Ten Ting; Song-Tsang Chiang; Ching-Lan Yen, “ONO SMD - A Silicon Microstrip Detector with ONO A-C Coupled Capacitor”, Electron Devices and Materials Symposium, EDMS, pp. 6-8-29 -6-8-32 , 1994.
[30]Wen-Chin Tsay, Jyh-Wong Hong, Y.H.Chang, A.Chen, S.R.Hou, S.L.Hsu, C.H.Lin, Willis T.Lin, Hsien-Jen Ting, Song-Tsang Chiang, Emily Chuang, and Su-Wen Hwang, “Studies of Large- Area Silicon Microstrip Sensors”, IEEE Trans. On Nuclear Science, Vol.42, No.4, pp. 437-440, 1995.
[31]A. Rohatgi and P. Rai-Choudhury, “Design, Fabrication and Analysis of 17-18 Percent Efficient Surface Passivated Silicon Solar Cells,” IEEE Trans. Electron. Devices, Vol. ED-31, pp. 596-600, 1984
[32]P. Bloch, A. Cheremukhin, S.Golubkov, I. Golvutvin, N. Egorov, K. Konjkov, A. Peisert, A. Sidorov, and N. Zamiatin, “Investigation of Silicon Sensor Quality as a Function of the Ohmic Side Processing Technology,” IEEE Trans. Nuclear Science, Vol. 49, No.1, pp. 321-324, 2002
[33]G. F. Dalla Betta, M. Boscardin, G. Verzellesi, G. U. Pignatel, A. Fazzi, and G. Soncini, “A Test Chip for the Development of PIN-Type Silicon Radiation Detectors,” IEEE Porceedings on Microelectronic Test Structures, Vol. 9, pp. 231-232, 1996
[34]Istrator. A.A., Flink. C.,Hieslmair., Heiser. T., Webber. E. R. “Influence of Interstitial Copper on Diffusion Length and Lifetime of Minority Carriers in P-type Silicon” Appl. Phy. Lett. Vol. 71, No. 15, p. 212, 1997

指導教授

洪志旺(Jyh-Wong Hong)

審核日期

2005-7-13

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