近年來，能源問題越來越被人們所重視，因此在功率上的要求與日俱增。氮化鎵材料由於先天的材料優勢及特性，如:高抗熱、高崩潰電壓、高電子飽和速度、優秀的壓電效應以及高電流密度，使得在未來高速、高功率的應用上成為極佳的選擇，尤其適合像是在汽車電子高溫高功率的環境。本論文將實現能高速、高電壓操作之氮化鎵高電子遷移率功率電晶體，並整合蕭特基二極體，應用於直流對直流升壓轉換器；同時利用與『砷化鎵假晶格高電子遷移率電晶體、矽材料功率金氧半場效電晶體』互相比較，顯現出氮化鎵能同時實現高速、高電壓操作的獨特優勢。 第二章將先利用ADS模擬軟體模擬、分析升壓電路，了解其對元件的需求；並且在此章完成砷化鎵高速、低電壓操作，與矽材料低速、高電壓操作之直流對直流升壓電路。第三章則簡單介紹氮化鎵高電子遷移率電晶體之原理；並在此章說明元件設計的佈局與詳細製作流程。第四章針對第三章完成的電晶體與二極體，先量測其直流與高頻、功率特性；並實現高速(1 MHz)、高電壓(30 V)『氮化鎵高電子遷移率功率電晶體整合蕭特基二極體直流對直流升壓電路』。第五章最後將對本論文結果做一歸納總結，並且探討未來改善與研究方向。 In recent years, energy problem has been taken seriously day by day. Therefore, the power semiconductor device is showing increasing important in power electronics. To break through the material limits of silicon to realize the drastic performance improvement, GaN have at-tracted much attention. GaN has several special properties: fine thermal stability, high breakdown voltage, high electron velocity, and high current density, and so on. GaN could be applied for high frequency and high voltage operation at high temperature environment, especially such as future automobile application. In my thesis, I would realize GaN HEMT integrated schottky diode and apply it to high frequency and high voltage operation dc to dc converter. I also compare Si power MOSFET and GaAs pHEMT with GaN in applying dc to dc converter and recognize the advantage of GaN for power electronics. In chap2, I would set up simulation platform with “Aglient Ad-vanced Design System 2005”, and analyze dc to dc converter to check what demands for device. I also establish measurement system for dc to dc converter in this chapter, and use GaAs pHEMT and Si power MOS-FET to compose dc to dc converter. In chap3, I utilize the experience in previous to design GaN power device and schottky diode. Besides, the process fabrication flow is shown in this chapter, too. The dc and rf per-formance are measured in chap4. High frequency (1 MHz) and high voltage (30 V) GaN dc to dc converter is realized and analyzed. Finally, I would drop some conclusions and future work.
