本論文針對砷化鎵蕭特基二極體佈局參數進行靜電防護能力之研究，從實際靜電測試結果，發現二極體之閘極周長與人體模型(HBM)電壓呈現正比關係。在閘極寬度(Gate Width, W)為37.5 μm、閘極長度(Gate Length, L)為1.5 μm，閘極指數目(Gate Finger Number, N)為8時，其人體模型(HBM)靜電測試電壓可達1250伏特以上。同時針對二極體元件之熱效應進行模擬與驗證，發現元件的散熱能力和靜電承受能力呈現正比的關係。所以，針對靜電防護之砷化鎵蕭特基二極體，有兩個主要的因素，分別是元件閘極周長，以及元件散熱能力。最後，將最佳化之砷化鎵蕭特基二極體應用在砷化鎵高電子遷移率電晶體(pHEMT)之微波開關器上，經由量測得知，其插入損失(Insertion Loss)在1.1dB以下，隔離度(Isolation)在33 dB以上，功率處理能力(P1dB) (OFF state)在1W (30dBm)以上，面積為0.3-mm2，同時經過ESD-HBM測試，靜電承受能力達1000V以上。 This thesis is about that proceeding with the research for the ESD protection ability to the Schottky diode layout parameter of GaAs. According to the result of ESD test, we can find that the gate periphery of the diode and HBM voltage can be direct proportion. While the gate width is 37.5 μm, gate length is 1.5 μm , the Gate Finger Number is 8, the voltage of the ESD test can be up to more than 1250 voltage for the HBM voltage. We also do the simulation and prove to the heat effect of the diode. To make optimized Schottky Diode of the GaAs be applied in the micro-wave switch of GaAs pHEMT. According to the result, the insertion loss is under 1.1dB, isolation is over 33 dB, power handling capability(P1dB)(OFF state) is above of 1W(30dBm), the area is 0.3-mm2. Through the ESD-HBM test at the same time, the ESD bearing ability reaches above 1000V.
