陣列式側向接面藍光氮化鎵發光二極體; Array of GaN Based Transverse-Junction Blue Light Emitting Diodes

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/10315

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10315

Title:	陣列式側向接面藍光氮化鎵發光二極體;Array of GaN Based Transverse-Junction Blue Light Emitting Diodes
Authors:	林壯聲;Chuang-sheng Lin
Contributors:	電機工程研究所
Keywords:	氮化鎵;側向接面;發光二極體;light emitting diode;transverse junction;GaN
Date:	2008-07-09
Issue Date:	2009-09-22 12:11:59 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	在本論文中，我們成功展示出在460nm波段，利用陣列式側向接面的方式來改善大型化後發光二極體的輸出功率以及量子效率。我們將陣列的數目從1x1提升到4x4陣列，在相同操作電流下，輸出功率和傳統垂直接面發光二極體比較確實達到改善。之後，我們進行光強度分佈量測，側向接面發光二極體在光強度分佈上的表現，在相同操作電流下，的確是比垂直接面更能達到電流擴散增加光功率。從以上量測結果，我們推論側向接面的方式確實可以擁有增強內部量子效率的優點，降低發光二極體大型化後面臨到電流壅塞的問題，雖然側向接面發光二極體驅動電壓相對地增加，但我們可以將元件在之後發展上，盡量減少側向接面之間的距離等。 We demonstrate the array of GaN-based blue-light light-emitting diode (LED), which is composed of GaN-based blue wavelength multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the re-growth of n-type GaN layers on the sidewall of p-type GaN and MQWS. The non-uniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs. In output power measurements, the transverse junction light-emitting diodes show higher output power as compare with the conventional vertical junction light-emitting diodes. Moreover, the transverse junction light-emitting diodes with more elements small light-emitting diodes have better current spreading and reduce current crowding effect.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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