850nm光脈衝激發次兆赫波發射器; Sub-THz Photonic-Transmitters by 850nm Wavelengths Optical Pulse Pumping

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Title:	850nm光脈衝激發次兆赫波發射器;Sub-THz Photonic-Transmitters by 850nm Wavelengths Optical Pulse Pumping
Authors:	黃丞宇;Cheng-yu Huang
Contributors:	電機工程研究所
Keywords:	THz;光發射器;單極圓碟天線;分離-傳輸-複合光二極體;單載子傳輸光二極體;photonic-transmitters;THz
Date:	2008-07-09
Issue Date:	2009-09-22 12:14:58 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	在本論文的研究中我們展示了兩個新穎的光電發射器，一個是利用低溫成長砷化鎵(LTG-GaAs)為基材的分離式傳輸複合光二極體(STR-PD) ，另一者是以砷化鎵/砷化鋁鎵(GaAs/AlGaAs)為基材的單載子傳輸光二極體(UTC-PD)。此兩種元件結合槽孔式的單極圓碟微波天線，其具有無需要整合在Si-lens的優點。藉由中心波長為800nm超快速飛秒光脈衝光訊號的激發下，我們的光電發射器可幅射出一個強而有力的次兆赫波脈衝訊號(最大功率20mW)和一個較寬的頻帶(100GHz到250GHz)。並由兆赫波時域光譜(TDS)系統量測並轉換成頻域訊號，此頻域訊號可應用在兆赫波資料連結系統內。而當元件操作在逆偏下，此光電發射器的峰值功率（峰值電場平方）隨著外加偏壓有顯著的變化，並經由訊號歸一化分析後，我們可以清楚的看到峰值功率與外加逆偏壓呈現一線性關係，此線性現象對於我們調制光次兆赫波的傳輸資料，有很大的益助。 In this paper, we demonstrated two novel photonic transmitters; one is composed of low-temperature-grown GaAs (LTG-GaAs) based separated-transport-recombination photodiode (STR-PD) and the other is GaAs/AlGaAs based Uni-traveling-carrier photodiode (UTC-PD). Both devices are integrated with broadband micromachined monopole antennas but without the integration with Si-lens. Under femto-second optical pulse illumination which the wavelength of around 800nm, the photonic-transmitter can radiate strong sub-THz pulses (20mW peak-power) with a wide bandwidth (100~250GHz). Such result was directly measured by a THz-TDS system, which could be used as a THz UWB data link system. The bias dependent high-peak-power performance of our device implies its application of photonic emitter and data modulator in photonic sub-THz UWB system.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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