本篇論言的研究主題為低壓用鋁電解電容器鋁箔的基礎性質研究，利用控制不同的電蝕條件，如電流波形、電流密度、電流量等，來加以探討不同的電蝕參數對於靜電容量的影響。 實驗首先利用ICP-AES分析實驗中所用的兩種試片，試片M與試片J中所含有的微量元素。並藉由金相觀察與極圖(pole figure)分析，觀察、判斷鋁箔的微觀組織及加工組織。鋁箔的電蝕條件為以鹽酸為主的電蝕液中進行電蝕，電蝕中輸入的電蝕頻率為40 Hz∼70 Hz的交流電，電流波行為正弦波與三角波行，電流密度為0.233 A/cm2∼0.293 A/cm2，以110 C/cm2∼230 C/cm2的電量對鋁箔進行電蝕。之後按照EIAJ的規範對電蝕箔做20伏特的化成處理，並量測靜電容量與重量損失率。 使用光學顯微鏡及掃描式電子顯微鏡觀察電蝕箔的截面腐蝕形態及電蝕箔表面的腐蝕孔洞分布，並利用SEM觀察以皮膜複製法(the oxide replica)複製電蝕鋁箔的腐蝕孔形態。藉由這些分析過程，加以判斷不同的電蝕參數對電解電容器鋁箔的靜電容量影響。 由實驗結果得知：腐蝕孔的大小會受到電蝕頻率與電流密度的影響，但是腐蝕量主要受到電流量大小所影響，電流量越大，腐蝕量越大。然而靜電容量的高低與重量損失率並不是成正比的，而是受到電蝕孔的大小、分布形態等的影響，所以，可以藉由電蝕參數的控制，以獲得最佳的電蝕孔大小與腐蝕組織的分布，以達到提高靜電容量的目的。 Electrochemical etching of aluminum electrolytic capacitor foils with alternating current produces a high density cubic etch pits covered with a film of oxide or hydroxide. Etching pits of various shapes are formed when aluminum is anodically dissolved in chloride solutions. The effect of various shapes such as the elements of aluminum foil, bath temperature, current density, waveform on the cubic pit propagation and porous etching structure formation were concerned in this study. An aluminum specimen of 99.9 % purity was electrochemical etched in HCl solution for comparison with the current density, frequency, waveform, and current charge. After a-c etching, the etched foil was formed at 20 Vfe in ammonium adipate solution and the capacitance was measured under EIAJ specifications. Outer surface and cross section was examined with a scanning electron microscope (SEM).
