Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28041

Title:	Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays
Authors:	Wu,ML;Lee,YC;Yang,SP;Lee,PS;Chang,JY
Contributors:	光電科學研究所
Date:	2009
Issue Date:	2010-06-29 19:40:47 (UTC+8)
Publisher:	中央大學
Abstract:	In this paper, the irradiance-modifying concept is proposed by introducing a microlens array on the p-GaN layer of GaN-based light-emitting diode (LED). Every microlens can locally modulate photons emitting from a micro-scaled active region of multiple quantum wells (MQWs) just beneath the microlens. The azimuthally isotropic irradiance from the GaN-based LED with microlens arrays is demonstrated numerically and experimentally. To realize such a novel LED, one-dimensional GaN microlens array with a period of 1.6 mu m and a filling factor of 0.64 are fabricated by using dry etching. According to experimental results, the azimuthally isotropic light emission of proposed LED is observed. By using the angular-resolved photoluminescence, its intensity variation corresponding to the azimuth angles is as low as 10% within the angle region of +/- 50 degrees. (C) 2009 Optical Society of America
Relation:	OPTICS EXPRESS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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