Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28063

Title:	Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition
Authors:	Kuo,CW;Fu,YK;Kuo,CH;Chang,LC;Tun,CJ;Pan,CJ;Chi,GC
Contributors:	光電科學研究所
Keywords:	LIGHT-EMITTING-DIODES;N-TYPE GAN;YELLOW LUMINESCENCE;FILMS;SCATTERING;MOVPE
Date:	2009
Issue Date:	2010-06-29 19:41:07 (UTC+8)
Publisher:	中央大學
Abstract:	Unintentionally doped GaN with conventional single low-temperature (LT) AlN buffer layer and with double MgxNy/AlN buffer layers both were prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN by using double MgxNy/AlN buffer layers. GaN with double MgxNy/AlN buffer layers reveals an asymmetrical reflection (10 2) and (0 0 2) with a smaller full-width at half-maximum (FWHM), and a higher mobility, lower background concentration and lower etching pit density (EPD) than the GaN with the LT-AlN buffer layer. (C) 2008 Elsevier B.V. All rights reserved.
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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