GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28091

Title:	GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
Authors:	Lai,WC;Chen,PH;Chang,LC;Kuo,CH;Sheu,JK;Tun,CJ;Shei,SC
Contributors:	光電科學研究所
Keywords:	LIGHT-EMITTING-DIODES;NITRIDE-BASED LEDS;EXTRACTION EFFICIENCY;INGAN-GAN;BLUE;ENHANCEMENT;SURFACE;OUTPUT;LAYERS
Date:	2009
Issue Date:	2010-06-29 19:41:34 (UTC+8)
Publisher:	中央大學
Abstract:	In this letter, the authors report the fabrication of GaN-based light-emitting diodes (LEDs) with mesh indium-tin-oxide p-contact and nanopillars on patterned sapphire substrate. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nanopillars inside the mesh regions and on the mesa-etched regions. It was found that 20-mA forward voltage and reverse leakage currents observed from the proposed LED were only slightly larger than those observed from the conventional LEDs. It was also found that output power of the proposed LED was more than 80% larger than that observed from conventional LED prepared on flat sapphire substrate.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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