GaN-Based Light-Emitting Diode Prepared on Nano-Inverted Pyramid GaN Template

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28093

Title:	GaN-Based Light-Emitting Diode Prepared on Nano-Inverted Pyramid GaN Template
Authors:	Kuo,CW;Chang,LC;Kuo,CH
Contributors:	光電科學研究所
Keywords:	INGAN-GAN;LEDS;LAYERS;LITHOGRAPHY;IMPROVEMENT;BRIGHTNESS;EFFICIENCY;BLUE
Date:	2009
Issue Date:	2010-06-29 19:41:36 (UTC+8)
Publisher:	中央大學
Abstract:	Using self-aligned SiO nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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