Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates

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题名:	Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates
作者:	Kuo,CH;Chang,LC;Kuo,CW;Tun,CJ
贡献者:	光電科學研究所
关键词:	YELLOW LUMINESCENCE;LEDS
日期:	2009
上传时间:	2010-06-29 19:41:44 (UTC+8)
出版者:	中央大學
摘要:	In this study, we introduce a method combining the inductively coupled plasma and wet etching process with SiO2 microspheres to fabricate the nanoinverted pyramid (NIP) structures of a GaN template. GaN epitaxial layers and GaN-based multiple quantum well light emitting diode (LED) structures with a conventional single GaN buffer and an NIP GaN template were proposed and fabricated. The NIP GaN template can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. By using an NIP GaN template, we can enhance LED output power by 32%. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3240596]
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
显示于类别:	[光電科學研究所] 期刊論文

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