Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28117

Title:	Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step
Authors:	Kuo,CH;Fu,YK;Yeh,CL;Tun,CJ;Chen,PH;Lai,WC;Chang,SJ
Contributors:	光電科學研究所
Keywords:	TEMPERATURE-DEPENDENCE;INGAN SINGLE;PHOTOLUMINESCENCE;LUMINESCENCE;EMISSION;FILMS
Date:	2009
Issue Date:	2010-06-29 19:41:59 (UTC+8)
Publisher:	中央大學
Abstract:	A nitride-based asymmetric two-step light-emitting diode ( LED) with In0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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