High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

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題名:	High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers
作者:	Tsai,CD;Shiao,HP;Lee,CT;Tu,YK
貢獻者:	光電科學研究所
關鍵詞:	SEMICONDUCTOR
日期:	1997
上傳時間:	2010-06-29 19:43:21 (UTC+8)
出版者:	中央大學
摘要:	To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated, The dark current density of the photodetectors is about 7 mu A/cm(2) Its responsivity at 0.83-mu m wavelength is about 0.48 A/W. After thermal storage at 150 degrees C for 10 h, no performance degradation was found in the novel photodetectors.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
顯示於類別:	[光電科學研究所] 期刊論文

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