Low temperature growth of diamond-like films by cathodic arc plasma deposition

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題名:	Low temperature growth of diamond-like films by cathodic arc plasma deposition
作者:	Chen,PL;Tsai,MY;Kao,JS
貢獻者:	光電科學研究所
關鍵詞:	CHEMICAL-VAPOR-DEPOSITION;CARBON COATINGS;EVAPORATION;OXYGEN;TRANSPORT
日期:	1996
上傳時間:	2010-06-29 19:44:07 (UTC+8)
出版者:	中央大學
摘要:	Diamond-like films with electrical resistivity exceeding 10(8) Omega . cm are grown successfully on silicon substrates at 40 degrees C in a cathodic are plasma deposition system with a steered-are source. The substrate is placed in an atmosphere of argon/oxygen mixture and RF-bias is applied. Low density graphite serves as a cathode target and a carbon source. The magnetic field due to magnets behind the graphite target makes the are spot move, The observed speed of the steered-are spot is strongly dependent on the magnitude of the applied are current and the intensity of the radial magnetic field at the surface of the target. Addition of O-2 to the system tends to improve the quality of the diamond-like films by increasing the sp(3)-C/sp(2)-C ratio and reducing the number and size of graphite microparticles with decreased deposition rate of the films, The application of RF-bias also appears to have a similar beneficial effect on the quality of the films.
關聯:	APPLIED SURFACE SCIENCE
顯示於類別:	[光電科學研究所] 期刊論文

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