利用二氧化矽作為絕緣層為目前半導體中最普遍的材料，本篇論文所採用的IBIO製程，在先前本實驗室已成功利用本系統在常溫及650℃的基板溫度下製作出二氧化矽層，先前的實驗結果顯示電流密度與曝氧濃度越大，形成二氧化矽的量也越多；且在常溫，曝氧1×10-4Torr，經電流密度4μA擊打4小時之條件下，所形成的SiO2濃度最多也最深。 本篇論文主要探討在常溫及650℃的基板溫度下，將總離子劑量固定在4.57 x1017ions/cm2，曝氧濃度皆為1×10-4Torr，期望藉由在不同的離子束能量(9keV、7keV、5keV)下，得到濃度較高的二氧化矽層並探討IBIO的成長模式。 實驗結果顯示，在常溫下，5keV的離子束在7.5nm之前可產生濃度較高的二氧化矽；其第一層的濃度高達98.1%，但9keV可形成較深層的二氧化矽。650℃下，形成二氧化矽的濃度與深度皆與離子束能量成正比。然而不管在常溫還是650℃下，矽晶圓經離子束撞擊過後，其表面皆隨著能量的增加而越粗糙。 Presently, silicon dioxide is the popular material for insulators in semiconductor. In this article, we use the technique Ion Beam Induced Oxidation(IBIO). Our laboratory had successfully been manufacturing Silicon dioxide use our system at substrate in room temperature and 650℃. Silicon dioxide will be growing as the ion beam current and oxygen increase. It shows that at room temperature, beam current 4μA, oxygen pressure at 1×10-4Torr, we can obtain the most silicon dioxide. In this article, we treat the silicon substrate with different ion energy(9keV、7keV、5keV) at room temperature and 650℃.We fixed the ion dose at 4.57×1017ions/cm2, and oxygen pressure at 1×10-4Torr. The result shows that at room temperature ion beam with the energy 5keV can produce more SiO2, and in top layer, the concentration of SiO2 is 98.1%. However, 9keV ion beam can produce SiO2 in deeper layer. At 650℃,the concentration of SiO2 is boosted as beam energy increase. In addition, the silicon surface will be rough after ion bombardment. The surface becomes more rough with beam energy increase.
