Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs

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Title:	Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs
Authors:	Shieh,JL;Chang,MN;Cheng,YS;Chyi,JI
Contributors:	電機工程研究所
Keywords:	DEEP LEVELS
Date:	1997
Issue Date:	2010-06-29 20:21:11 (UTC+8)
Publisher:	中央大學
Abstract:	Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in the MBE-grown InxAl1-xAs. Low-temperature growth as well as thermal annealing were found to be capable of reducing these defects effectively, especially the dislocation defect.
Relation:	COMPOUND SEMICONDUCTORS 1996
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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