GaAs metal-semiconductor-metal photodetectors with recessed cathodes and/or anodes

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29303

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29303

Title:	GaAs metal-semiconductor-metal photodetectors with recessed cathodes and/or anodes
Authors:	Yuang,RH;Shieh,JL;Chyi,JI;Chen,JS
Contributors:	電機工程研究所
Keywords:	MSM PHOTODETECTORS
Date:	1997
Issue Date:	2010-06-29 20:21:18 (UTC+8)
Publisher:	中央大學
Abstract:	We report on the experimental work on GaAs MSM photodetectors with recessed cathodes and/or anodes. The recessed-electrode structure results in effective collection of the deep holes due to the uniformly distributed and strengthened electric field as well as shortened transit path. As compared to the conventional device, improved de responsivity from 0.14 to 0.24 A/W and temporal response including full-width at half-maximum from 27 to 22 ps, fall time from 117 to 68 ps, and peak amplitude from 116 to 212 mV were simultaneously observed at 5 V bias in the recessed-electrode device with an active area of 50 x 50 mu m(2) and a finger width/spacing of 3 mu m, respectively.
Relation:	COMPOUND SEMICONDUCTORS 1996
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	587	View/Open

社群 sharing