Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure

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題名:	Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure
作者:	Yuang,RH;Shieh,JL;Chyi,JI;Chen,JS
貢獻者:	電機工程研究所
關鍵詞:	SEMICONDUCTOR-METAL PHOTODETECTORS
日期:	1997
上傳時間:	2010-06-29 20:21:33 (UTC+8)
出版者:	中央大學
摘要:	We report the experimental work on the GaAs metal-semiconductor-metal photodetectors with recessed cathode and/or anode. The recessed-cathode detectors exhibit much superior dc and speed performance to the conventional one because of the enhancement of hole transport in this structure, Full-width at half-maximum and fall time of the temporal response were measured to be 21 and 13 ps at 5 V bias on a 50x50 mu m(2) detector with a finger width and spacing of 3 mu m.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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