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    題名: Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers
    作者: Chyi,JI;Wang,SK;Gau,JH;Shieh,JL;Pan,JW
    貢獻者: 電機工程研究所
    關鍵詞: MOLECULAR-BEAM EPITAXY;THRESHOLD CURRENT;WELL LASERS;SUPERLATTICE;OPERATION;GAAS
    日期: 1996
    上傳時間: 2010-06-29 20:21:57 (UTC+8)
    出版者: 中央大學
    摘要: The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using transfer matrix method. The validity and Feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiquantum barriers. Based on the simulated results, both 0.78 and 1.3 mu m graded-index separate confinement heterostructure (GRIN-SCH) lasers with predicted enhanced carrier and optical confinements using graded multistack multiquantum barriers are designed. Lower threshold current, higher modulation bandwidth as well as higher characteristic temperature are expected for these lasers.
    關聯: IEEE JOURNAL OF QUANTUM ELECTRONICS
    顯示於類別:[電機工程研究所] 期刊論文

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