A FULLY DIFFERENTIAL CMOS TRANSCONDUCTANCE TRANSIMPEDANCE WIDE-BAND AMPLIFIER

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29368

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29368

Title:	A FULLY DIFFERENTIAL CMOS TRANSCONDUCTANCE TRANSIMPEDANCE WIDE-BAND AMPLIFIER
Authors:	WANG,CK;HUANG,PC;HUANG,CY
Contributors:	電機工程研究所
Date:	1995
Issue Date:	2010-06-29 20:22:55 (UTC+8)
Publisher:	中央大學
Abstract:	A high-speed wideband amplifier using a transconductance-transimpedance circuit technique is presented. The proposed circuit configuration results in more reliable performances than are typically obtained from designs using conventional pole-zero cancellation or peaking technique. With a 0.8 mu m, double poly, double metal, n-well CMOS technology and single 5-V power supply, the prelayout simulation of this amplifier shows a -3 dB frequency of 300MHz with a voltage gain of 14 dB when the loading capacitance is 1.5 pF.
Relation:	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	505	View/Open

社群 sharing