AL0.3GA0.7AS/INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS (DCFETS)

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题名:	AL0.3GA0.7AS/INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS (DCFETS)
作者:	CHAN,YJ;YANG,MT
贡献者:	電機工程研究所
关键词:	QUANTUM-WELLS;GAAS;ALGAAS/INGAAS;MOBILITY;FETS
日期:	1995
上传时间:	2010-06-29 20:23:00 (UTC+8)
出版者:	中央大學
摘要:	The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/InxGa1-xAs (0 less than or equal to x less than or equal to 0.25) heterostructures with various indium mole fractions, Through electrical characterization of grown layers in conjunction with the de and microwave device characteristics, we observed that the introduction of a 150-Angstrom thick strained In0.15Ga0.85As channel can enhance device performance, compared to the lattice-matched one, However, a degradation of device performance was observed for larger indium mole fractions, up to x = 0.25, which is associated with strain relaxation in this highly strained channel, DCFET's also preserved a more reliable performance after biased-stress testings.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[電機工程研究所] 期刊論文

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