DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS

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Title:	DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS
Authors:	CHAN,YJ;YANG,MT
Contributors:	電機工程研究所
Keywords:	POWER
Date:	1995
Issue Date:	2010-06-29 20:23:09 (UTC+8)
Publisher:	中央大學
Abstract:	The linearities of pseudomorphic heterostructure Al0.3Ga0.7As/In0.2Ga0.8As doped-channel FET's (DCFET's) and HEMT's were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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