DOUBLE-HETEROJUNCTION PSEUDOMORPHIC ALGAAS/IN0.15GA0.85 AS HEMT AND ITS SHORT-CHANNEL EFFECTS

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题名:	DOUBLE-HETEROJUNCTION PSEUDOMORPHIC ALGAAS/IN0.15GA0.85 AS HEMT AND ITS SHORT-CHANNEL EFFECTS
作者:	WU,CS;CHAN,YJ;CHEN,CD;CHUANG,TM;JUANG,FY;CHANG,CC;CHYI,JI
贡献者:	電機工程研究所
日期:	1995
上传时间:	2010-06-29 20:23:13 (UTC+8)
出版者:	中央大學
摘要:	AlGaAs/In-0.15 Ga-0.85 As double-heterojunction pseudimorphic high electron mobility transistors (DH-PHEMTs) were fabricated by the deep-UV lithographic technique. 0.6 mu m gate-length devices demonstrated a full channel current of 300 mA/mm at 300 K and 420 mA/mm at 77 K respectively, which is 1.5 times higher than that of single-heterojunction (SH) PHEMTs[1]. D.C. I-V characteristics showed a peak extrinsic transconductance of 230 and 330 mS/mm at 300 and 77 K, respectively. Microwave characteristics revealed a current gain cutoff frequency (f(tau)) of 16GHz and a maximum oscillation frequency (f(max)) of 61 GHz at 300 K. Due to a better carrier confinement in this double-heterostructure, short channel effects are less significant as compared to the single-heterostructure HEMTs.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程研究所] 期刊論文

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