HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER

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题名:	HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER
作者:	YUANG,RH;SHIEH,HC;CHIEN,YJ;CHAN,YJ;CHYI,JI;LIN,W;TU,YK
贡献者:	電機工程研究所
关键词:	SEMICONDUCTOR-METAL PHOTODETECTORS
日期:	1995
上传时间:	2010-06-29 20:23:18 (UTC+8)
出版者:	中央大學
摘要:	We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-mu m x 300-mu m square and a 300-mu m-diameter circular detection area, With a pseudomorphic In0.9Ga0.1P cap layer, the detectors exhibit dark current densities less than 1 pA/mu m(2), The responsivity ranges between 0.4 and 0.6 A/W depending on finger spacing, Bandwidth over 1 GHz has been obtained for these large-area detectors, Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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